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NTD4913NT4G

更新时间： 2024-09-16 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 138K
描述
Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK

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中文翻译

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NTD4913NT4G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：SMALL OUTLINE, R-PSSO-G2针数：4
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.68Base Number Matches：1

NTD4913NT4G 数据手册

 浏览型号NTD4913NT4G的Datasheet PDF文件第2页浏览型号NTD4913NT4G的Datasheet PDF文件第3页浏览型号NTD4913NT4G的Datasheet PDF文件第4页浏览型号NTD4913NT4G的Datasheet PDF文件第5页浏览型号NTD4913NT4G的Datasheet PDF文件第6页浏览型号NTD4913NT4G的Datasheet PDF文件第7页 
NTD4913N  
Power MOSFET  
30 V, 32 A, Single N−Channel, DPAK/IPAK  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
DS(ON)  
MAX  
I
D
MAX  
(BR)DSS  
Applications  
10.5 mW @ 10 V  
15 mW @ 4.5 V  
• CPU Power Delivery  
• DC−DC Converters  
30 V  
32 A  
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
Unit  
V
DSS  
30  
20  
V
V
A
G
V
GS  
Continuous Drain  
Current R  
I
D
T = 25°C  
10.5  
A
q
JA  
S
T = 100°C  
A
7.4  
2.5  
(Note 1)  
Power Dissipation  
(Note 1)  
N−CHANNEL MOSFET  
T = 25°C  
A
P
W
A
D
D
D
R
q
JA  
4
4
Continuous Drain  
Current R  
I
D
T = 25°C  
A
7.7  
5.4  
4
q
JA  
T = 100°C  
A
Steady  
State  
(Note 2)  
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
1.36  
W
A
2
1
1
1
R
q
JA  
2
3
3
2
3
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
32  
23  
24  
D
C
C
CASE 369AC  
3 IPAK  
(Straight Lead)  
CASE 369AA  
DPAK  
(Bent Lead)  
STYLE 2  
CASE 369D  
IPAK  
(Straight Lead  
DPAK)  
q
JC  
T
C
(Note 1)  
Power Dissipation  
(Note 1)  
T
P
W
A
R
q
JC  
Pulsed Drain  
Current  
t =10ms  
p
T = 25°C  
A
I
DM  
132  
60  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Current Limited by Package  
T = 25°C  
A
I
A
DmaxPkg  
4
Operating Junction and Storage  
Temperature  
T ,  
STG  
−55 to  
°C  
J
Drain  
T
+175  
4
4
Drain  
Drain  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
S
20  
8.0  
22  
A
dV/dt  
EAS  
V/ns  
mJ  
Single Pulse Drain−to−Source Avalanche  
Energy (T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
I = 21 A , L = 0.1 mH, R = 25 W)  
L
pk  
G
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
2
1
2
3
Drain  
1
3
Gate Drain Source  
Gate Source  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
1
2
3
Gate Drain Source  
Y
WW  
= Year  
= Work Week  
4913N = Device Code  
= Pb−Free Package  
G
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
June, 2009 − Rev. 0  
NTD4913N/D  
 
12345678

中文翻译

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NTD4913NT4G 替代型号

型号 品牌 替代类型 描述 数据表
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