5秒后页面跳转
NTD18N06T4G PDF预览

NTD18N06T4G

更新时间: 2024-02-02 08:46:55
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 213K
描述
功率 MOSFET,60V,18A,60mΩ,单 N 沟道,DPAK

NTD18N06T4G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:LEAD FREE, CASE 369C-01, DPAK-3
针数:3Reach Compliance Code:unknown
风险等级:5.15雪崩能效等级(Eas):72 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):18 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:NOT SPECIFIED元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):54 A
认证状态:COMMERCIAL表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NTD18N06T4G 数据手册

 浏览型号NTD18N06T4G的Datasheet PDF文件第4页浏览型号NTD18N06T4G的Datasheet PDF文件第5页浏览型号NTD18N06T4G的Datasheet PDF文件第6页浏览型号NTD18N06T4G的Datasheet PDF文件第7页浏览型号NTD18N06T4G的Datasheet PDF文件第8页浏览型号NTD18N06T4G的Datasheet PDF文件第9页 
NTD18N06  
PACKAGE DIMENSIONS  
DPAK3  
CASE 369D01  
ISSUE B  
NOTES:  
C
B
R
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
V
S
E
2. CONTROLLING DIMENSION: INCH.  
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
5.97  
6.35  
2.19  
0.69  
0.46  
0.94  
MAX  
6.35  
6.73  
2.38  
0.88  
0.58  
1.14  
4
2
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245  
0.250 0.265  
0.086 0.094  
0.027 0.035  
0.018 0.023  
0.037 0.045  
0.090 BSC  
0.034 0.040  
0.018 0.023  
0.350 0.380  
0.180 0.215  
0.025 0.040  
0.035 0.050  
A
K
1
3
T−  
SEATING  
PLANE  
2.29 BSC  
0.87  
0.46  
8.89  
4.45  
0.63  
0.89  
3.93  
1.01  
0.58  
9.65  
5.45  
1.01  
1.27  
−−−  
J
F
H
0.155  
−−−  
D 3 PL  
STYLE 2:  
PIN 1. GATE  
2. DRAIN  
G
M
T
0.13 (0.005)  
3. SOURCE  
4. DRAIN  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 850821312 USA  
Phone: 4808297710 or 8003443860 Toll Free USA/Canada  
Fax: 4808297709 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
291 Kamimeguro, Meguroku, Tokyo, Japan 1530051  
Phone: 81357733850  
For additional information, please contact your  
local Sales Representative.  
NTD18N06/D  

与NTD18N06T4G相关器件

型号 品牌 描述 获取价格 数据表
NTD20 EDI HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

获取价格

NTD20N03L27 ONSEMI Power MOSFET

获取价格

NTD20N03L27/D ETC Power MOSFET 20 Amps, 30 Volts

获取价格

NTD20N03L271 ONSEMI TRANSISTOR 20 A, 30 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3, FET

获取价格

NTD20N03L27-1 ONSEMI Power MOSFET

获取价格

NTD20N03L27-1G ONSEMI Power MOSFET

获取价格