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NSS20601CF8T1G

更新时间： 2024-01-21 10:33:26
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
6页 84K
描述
20 V, 8.0 A, Low VCE(sat) NPN Transistor

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中文翻译

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NSS20601CF8T1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-C8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：17 weeks风险等级：1.55
最大集电极电流 (IC)：6 A集电极-发射极最大电压：20 V
配置：SINGLE最小直流电流增益 (hFE)：200
JESD-30 代码：R-PDSO-C8JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：8最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：1.4 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：140 MHz
最大关闭时间（toff）：980 ns最大开启时间（吨）：240 ns
Base Number Matches：1

NSS20601CF8T1G 数据手册

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NSS20601CF8T1G  
20 V, 8.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor's e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC-DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU's control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
20 VOLTS, 8.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 31 mW  
COLLECTOR  
1, 2, 3, 6, 7, 8  
2
4
BASE  
•ꢀThis is a Pb-Free Device  
MAXIMUM RATINGS (T = 25°C)  
A
5
EMITTER  
Rating  
Symbol  
Max  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
A
Collector‐Emitter Voltage  
Collector‐Base Voltage  
Emitter‐Base Voltage  
V
CEO  
V
CBO  
V
EBO  
20  
8
ChipFET]  
6.0  
6.0  
8.0  
CASE 1206A  
STYLE 4  
Collector Current - Continuous  
Collector Current - Peak  
Electrostatic Discharge  
I
C
1
I
CM  
MARKING DIAGRAM  
ESD  
HBM Class 3B  
MM Class C  
VD M  
THERMAL CHARACTERISTICS  
Characteristic  
G
Symbol  
Max  
Unit  
Total Device Dissipation, T = 25°C  
P
D
(Note 1)  
830  
6.7  
mW  
mW/°C  
A
VD= Specific Device Code  
M = Month Code  
Derate above 25°C  
Thermal Resistance,  
Junction-to-Ambient  
R
(Note 1)  
150  
°C/W  
q
JA  
G
= Pb-Free Package  
Total Device Dissipation, T = 25°C  
P
D
(Note 2)  
1.4  
11.1  
W
mW/°C  
A
PIN CONNECTIONS  
Derate above 25°C  
Thermal Resistance,  
Junction-to-Ambient  
R
R
(Note 2)  
(Note 2)  
90  
°C/W  
°C/W  
°C  
q
JA  
8
7
6
5
1
2
3
4
C
C
C
E
C
C
C
B
Thermal Resistance,  
Junction-to-Lead #1  
15  
q
JL  
Junction and Storage  
Temperature Range  
T , T  
J
-55 to  
+150  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
2
1. FR-ā4 @ 100 mm , 1 oz copper traces.  
2
†
Device  
NSS20601CF8T1G  
Package  
Shipping  
2. FR-ā4 @ 500 mm , 1 oz copper traces.  
ChipFET  
(Pb-Free)  
3000/  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
May, 2007 - Rev. 1  
1
Publication Order Number:  
NSS20601CF8/D  
 
123456

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