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NSS40201LT1G

更新时间： 2024-01-04 07:40:24
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 119K
描述
40 V, 4.0 A, Low VCE(sat) NPN Transistor

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中文翻译

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NSS40201LT1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SOT-23包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：8 weeks
风险等级：1.54最大集电极电流 (IC)：2 A
集电极-发射极最大电压：40 V配置：SINGLE
最小直流电流增益 (hFE)：180JEDEC-95代码：TO-236
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：0.54 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：150 MHz
最大关闭时间（toff）：200 ns最大开启时间（吨）：860 ns
Base Number Matches：1

NSS40201LT1G 数据手册

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NSS40201LT1G  
40 V, 4.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
40 VOLTS, 4.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 44 mW  
COLLECTOR  
3
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
40  
Unit  
Vdc  
Vdc  
Vdc  
A
3
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
40  
1
V
EBO  
6.0  
2.0  
4.0  
2
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
SOT−23 (TO−236)  
CASE 318  
I
A
CM  
STYLE 6  
ESD  
HBM Class 3B  
MM Class C  
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
(Note 1)  
460  
mW  
VB M G  
D
T = 25°C  
G
A
Derate above 25°C  
3.7  
mW/°C  
°C/W  
1
Thermal Resistance,  
R
q
(Note 1)  
270  
JA  
Junction−to−Ambient  
VB = Specific Device Code  
Total Device Dissipation  
P
(Note 2)  
540  
mW  
M
G
= Date Code*  
= Pb−Free Package  
D
T = 25°C  
A
Derate above 25°C  
4.3  
mW/°C  
°C/W  
(Note: Microdot may be in either location)  
Thermal Resistance,  
R
q
(Note 2)  
230  
JA  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Junction−to−Ambient  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
°C  
J
stg  
+150  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†
Device  
Package  
Shipping  
NSS40201LT1G  
SOT−23  
3000/Tape & Reel  
2
2
1. FR−4 @ 100 mm , 1 oz. copper traces.  
(Pb−Free)  
2. FR−4 @ 500 mm , 1 oz. copper traces.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 − Rev. 5  
NSS40201L/D  
 
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中文翻译

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NSS40201LT1G 替代型号

型号 品牌 替代类型 描述 数据表
NSV40201LT1G ONSEMI

类似代替

 低饱和压晶体管，NPN，40 V，2.0 A

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