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NSS40300MZ4T3G

更新时间： 2024-01-11 10:27:42
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
6页 94K
描述
Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor

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中文翻译

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NSS40300MZ4T3G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：TO-261AA包装说明：HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN
针数：4Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.21.00.75
Factory Lead Time：9 weeks风险等级：0.85
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：3 A集电极-发射极最大电压：40 V
配置：SINGLE最小直流电流增益 (hFE)：100
JEDEC-95代码：TO-261AAJESD-30 代码：R-PDSO-G4
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：4
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：160 MHzBase Number Matches：1

NSS40300MZ4T3G 数据手册

 浏览型号NSS40300MZ4T3G的Datasheet PDF文件第2页浏览型号NSS40300MZ4T3G的Datasheet PDF文件第3页浏览型号NSS40300MZ4T3G的Datasheet PDF文件第4页浏览型号NSS40300MZ4T3G的Datasheet PDF文件第5页浏览型号NSS40300MZ4T3G的Datasheet PDF文件第6页 
NSS40300MZ4  
Preferred Device  
Bipolar Power Transistors  
40 V, 3.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor's e PowerEdge family of low V  
CE(sat)  
http://onsemi.com  
transistors are surface mount devices featuring ultra low saturation  
voltage (V ) and high current gain capability. These are designed  
CE(sat)  
for use in low voltage, high speed switching applications where  
affordable efficient energy control is important.  
PNP TRANSISTOR  
3.0 AMPERES  
Typical applications are DC-DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
40 VOLTS, 2.0 WATTS  
C 2,4  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU's control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
•ꢀThese are Pb-Free Devices  
B 1  
E 3  
Schematic  
MARKING  
DIAGRAM  
SOT-223  
CASE 318E  
STYLE 1  
AYW  
40300G  
1
A
Y
= Assembly Location  
Year  
W
= Work Week  
40300 = Specific Device Code  
G
= Pb-Free Package  
PIN ASSIGNMENT  
4
C
B
C
E
3
1
2
Top View Pinout  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
May, 2007 - Rev. 0  
1
Publication Order Number:  
NSS40300MZ4/D  
123456

中文翻译

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NSS40300MZ4T3G 替代型号

型号 品牌 替代类型 描述 数据表
NSV40300MZ4T1G ONSEMI

完全替代

 3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor
MMJT9435T1 ONSEMI

类似代替

 Bipolar Power Transistors PNP Silicon

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