Datasheet > NSS40301MZ4_10

NSS40301MZ4_10

更新时间： 2024-09-25 10:31:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	103K
描述
Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor

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NSS40301MZ4_10 数据手册

NSS40301MZ4

Bipolar Power Transistors

40 V, 3.0 A, Low V_CE(sat)

NPN Transistor

ON Semiconductor’s e PowerEdge family of low V

CE(sat)

http://onsemi.com

transistors are surface mount devices featuring ultra low saturation

voltage (V ) and high current gain capability. These are designed

CE(sat)

for use in low voltage, high speed switching applications where

affordable efficient energy control is important.

NPN TRANSISTOR

3.0 AMPERES

40 VOLTS, 2.0 WATTS

Typical applications are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

C 2,4

cluster. The high current gain allows e PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

B 1

E 3

Features

Schematic

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MARKING

DIAGRAM

AYW

40301G

SOT−223

CASE 318E

STYLE 1

= Assembly Location

Year

= Work Week

40301 = Specific Device Code

= Pb−Free Package

PIN ASSIGNMENT

Top View Pinout

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

September, 2010 − Rev. 1

NSS40301MZ4/D

12 3 4 5 6

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