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NSS60200DMTTBG PDF预览

NSS60200DMTTBG

更新时间： 2024-11-05 11:14:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 251K
描述
Dual 60V 2A Low VCE(sat) PNP Transistors in WDFN6

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NSS60200DMTTBG 数据手册

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DATA SHEET  
www.onsemi.com  
Low VCE(sat) PNP Transistors  
60 V, 2 A  
60 Volt, 2 Amp  
PNP Low V Transistors  
CE(sat)  
MARKING  
DIAGRAM  
NSS60200DMT  
2
onsemi’s e PowerEdge family of low V  
transistors are  
CE(sat)  
1
miniature surface mount devices featuring ultra low saturation voltage  
WDFN6  
CASE 506AN  
AD M  
(V ) and high current gain capability. These are designed for use  
CE(sat)  
in low voltage, high speed switching applications where affordable  
efficient energy control is important.  
1
2
3
6
5
4
Typical applications are DC−DC converters and LED lightning,  
power management…etc. In the automotive industry they can be used  
in air bag deployment and in the instrument cluster. The high current  
WDFNW6  
CASE 515AM  
AD MG  
G
2
AD = Specific Device Code  
gain allows e PowerEdge devices to be driven directly from PMU’s  
M
G
= Date Code  
control outputs, and the Linear Gain (Beta) makes them ideal  
components in analog amplifiers.  
= Pb−Free Package  
(Note: Microdot may be in either location)  
Features  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
• Wettable Flank Package for optimal Automated Optical Inspection  
(AOI); NSV60200DMTWTBG − Wettable Flanks Device  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
PIN CONNECTIONS  
6
5
4
1
2
3
BP1  
BP2  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector−Emitter Voltage  
Symbol  
Max  
60  
60  
6
Unit  
Vdc  
Vdc  
Vdc  
A
6, BP1  
5
1
2
V
CEO  
V
CBO  
V
EBO  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current − Continuous  
Collector Current − Peak  
I
C
2
I
3
A
CM  
4
3, BP2  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
†
Device  
NSS60200DMTTBG  
Package  
Shipping  
Characteristic  
Symbol  
Max  
Unit  
WDFN6  
(Pb−Free)  
3000/Tape &  
Reel  
Thermal Resistance Junction−to−Ambient  
(Notes 1 and 2)  
R
55  
°C/W  
q
JA  
NSV60200DMTWTBG WDFNW6 3000/Tape &  
(Pb−Free) Reel  
Total Power Dissipation per Package @  
A
P
2.27  
69  
W
°C/W  
W
D
T = 25°C (Note 2)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Thermal Resistance Junction−to−Ambient  
(Note 3)  
R
q
JA  
Power Dissipation per Transistor @ T = 25°C  
P
D
1.8  
A
(Note 3)  
Junction and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
2
1. Per JESD51−7 with 100 mm pad area and 2 oz. Cu (Dual Operation).  
2. P per Transistor when both are turned on is one half of Total P or 1.13 Watts.  
D
D
2
3. Per JESD51−7 with 100 mm pad area and 2 oz. Cu (Single−Operation).  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
March, 2022 − Rev. 4  
NSS60200DMT/D  
 
12345678

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