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NSS60600MZ4T3G

更新时间： 2024-11-04 02:52:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
5页 87K
描述
60 V, 6.0 A, Low VCE(sat) PNP Transistor

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中文翻译

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NSS60600MZ4T3G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：TO-261AA包装说明：SMALL OUTLINE, R-PDSO-G4
针数：4Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
Factory Lead Time：9 weeks风险等级：0.97
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：6 A集电极-发射极最大电压：60 V
配置：SINGLE最小直流电流增益 (hFE)：70
JEDEC-95代码：TO-261AAJESD-30 代码：R-PDSO-G4
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：4
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：100 MHz最大关闭时间（toff）：685 ns
最大开启时间（吨）：280 nsBase Number Matches：1

NSS60600MZ4T3G 数据手册

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NSS60600MZ4T1G  
60 V, 6.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor's e PowerEdge family of low V  
CE(sat)  
transistors are surface mount devices featuring ultra low saturation  
voltage (V ) and high current gain capability. These are designed  
CE(sat)  
for use in low voltage, high speed switching applications where  
affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC-DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
-60 VOLTS, 6.0 AMPS  
2.0 WATTS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 50 mW  
2
C 2,4  
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU's control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
•ꢀThis is a Pb-Free Device  
MAXIMUM RATINGS (T = 25°C)  
A
B 1  
E 3  
Rating  
Symbol  
Max  
-60  
Unit  
Vdc  
Vdc  
Vdc  
A
MARKING  
DIAGRAM  
Collector‐Emitter Voltage  
Collector‐Base Voltage  
Emitter‐Base Voltage  
V
CEO  
V
CBO  
V
EBO  
-100  
-6.0  
-6.0  
-12.0  
SOT-223  
CASE 318E  
STYLE 1  
AYW  
60600G  
Collector Current - Continuous  
Collector Current - Peak  
I
C
I
A
CM  
1
THERMAL CHARACTERISTICS  
Characteristic  
A
= Assembly Location  
= Year  
= Work Week  
Symbol  
Max  
Unit  
Y
W
Total Device Dissipation  
T = 25°C  
P
(Note 1)  
800  
mW  
D
60600 = Specific Device Code  
A
G
= Pb-Free Package  
Derate above 25°C  
6.5  
mW/°C  
°C/W  
Thermal Resistance,  
Junction-to-Ambient  
R
(Note 1)  
155  
q
JA  
PIN ASSIGNMENT  
4
Total Device Dissipation  
T = 25°C  
Derate above 25°C  
P
(Note 2)  
(Note 2)  
2
W
D
C
A
15.6  
64  
mW/°C  
°C/W  
Thermal Resistance,  
Junction-to-Ambient  
R
q
JA  
B
C
E
3
1
2
Total Device Dissipation  
(Single Pulse < 10 sec.)  
P
Dsingle  
(Note 3)  
710  
mW  
Top View Pinout  
Junction and Storage  
Temperature Range  
T , T  
J
-55 to  
+150  
°C  
stg  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NSS60600MZ4T1G  
SOT-223  
(Pb-Free)  
1000/  
Tape & Reel  
2
1. FR-ā4 @ 7.6 mm , 1 oz. copper traces.  
2
NSS60600MZ4T3G  
SOT-223  
(Pb-Free)  
4000/  
Tape & Reel  
2. FR-ā4 @ 645 mm , 1 oz. copper traces.  
3. Thermal response.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
July, 2007 - Rev. 1  
1
Publication Order Number:  
NSS60600MZ4/D  
 
12345

中文翻译

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NSS60600MZ4T3G 替代型号

型号 品牌 替代类型 描述 数据表
NSV60600MZ4T1G ONSEMI

类似代替

 60 V, 6.0 A, Low VCE(sat) PNP Transistor
NSS60600MZ4T1G ONSEMI

类似代替

 60 V, 6.0 A, Low VCE(sat) PNP Transistor

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