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NSS60601MZ4T3G

更新时间： 2024-11-13 07:03:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 106K
描述
60 V, 6.0 A, Low VCE(sat) NPN Transistor

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NSS60601MZ4  
60 V, 6.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor's e PowerEdge family of low V  
CE(sat)  
transistors are surface mount devices featuring ultra low saturation  
voltage (V ) and high current gain capability. These are designed  
CE(sat)  
for use in low voltage, high speed switching applications where  
affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC-DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU's control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
60 VOLTS, 6.0 AMPS  
2.0 WATTS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 50 mW  
C 2,4  
2
Features  
B 1  
E 3  
•ꢀThis is a Pb-Free Device  
Schematic  
MAXIMUM RATINGS (T = 25°C)  
A
MARKING  
DIAGRAM  
Rating  
Symbol  
Max  
60  
Unit  
Vdc  
Vdc  
Vdc  
A
Collector‐Emitter Voltage  
Collector‐Base Voltage  
Emitter‐Base Voltage  
V
CEO  
V
CBO  
100  
6.0  
SOT-223  
CASE 318E  
STYLE 1  
AYW  
60601G  
V
EBO  
Collector Current - Continuous  
Collector Current - Peak  
I
C
6.0  
1
I
12.0  
A
CM  
A
= Assembly Location  
= Year  
= Work Week  
THERMAL CHARACTERISTICS  
Characteristic  
Y
W
Symbol  
Max  
Unit  
60601 = Specific Device Code  
Total Device Dissipation  
T = 25°C  
Derate above 25°C  
P
(Note 1)  
800  
mW  
G
= Pb-Free Package  
D
A
PIN ASSIGNMENT  
4
6.5  
mW/°C  
°C/W  
Thermal Resistance,  
Junction-to-Ambient  
R
q
(Note 1)  
155  
JA  
C
Total Device Dissipation  
T = 25°C  
Derate above 25°C  
P
(Note 2)  
2
W
D
A
B
C
E
3
15.6  
64  
mW/°C  
°C/W  
1
2
Thermal Resistance,  
Junction-to-Ambient  
R
q
(Note 2)  
JA  
Top View Pinout  
Total Device Dissipation  
(Single Pulse < 10 sec.)  
P
Dsingle  
(Note 3)  
710  
mW  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Junction and Storage  
Temperature Range  
T , T  
J
-55 to  
+150  
°C  
stg  
NSS60601MZ4T1G  
NSS60601MZ4T3G  
SOT-223  
(Pb-Free)  
1000/  
Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
SOT-223  
(Pb-Free)  
4000/  
Tape & Reel  
2
1. FR-ā4 @ 7.6 mm , 1 oz. copper traces.  
2
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. FR-ā4 @ 645 mm , 1 oz. copper traces.  
3. Thermal response.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
September, 2007 - Rev. 0  
1
Publication Order Number:  
NSS60601MZ4/D  
 
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NSS60601MZ4T3G 替代型号

型号 品牌 替代类型 描述 数据表
NSS60601MZ4T1G ONSEMI

类似代替

 60 V, 6.0 A, Low VCE(sat) NPN Transistor
NSV60601MZ4T1G ONSEMI

功能相似

 60 V, 6.0 A, Low VCE(sat) NPN Transistor

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