NSS60601MZ4
60 V, 6.0 A, Low VCE(sat)
NPN Transistor
2
ON Semiconductor's e PowerEdge family of low V
CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V ) and high current gain capability. These are designed
CE(sat)
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
http://onsemi.com
Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
60 VOLTS, 6.0 AMPS
2.0 WATTS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 50 mW
C 2,4
2
Features
B 1
E 3
•ꢀThis is a Pb-Free Device
Schematic
MAXIMUM RATINGS (T = 25°C)
A
MARKING
DIAGRAM
Rating
Symbol
Max
60
Unit
Vdc
Vdc
Vdc
A
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
V
CEO
V
CBO
100
6.0
SOT-223
CASE 318E
STYLE 1
AYW
60601G
V
EBO
Collector Current - Continuous
Collector Current - Peak
I
C
6.0
1
I
12.0
A
CM
A
= Assembly Location
= Year
= Work Week
THERMAL CHARACTERISTICS
Characteristic
Y
W
Symbol
Max
Unit
60601 = Specific Device Code
Total Device Dissipation
T = 25°C
Derate above 25°C
P
(Note 1)
800
mW
G
= Pb-Free Package
D
A
PIN ASSIGNMENT
4
6.5
mW/°C
°C/W
Thermal Resistance,
Junction-to-Ambient
R
q
(Note 1)
155
JA
C
Total Device Dissipation
T = 25°C
Derate above 25°C
P
(Note 2)
2
W
D
A
B
C
E
3
15.6
64
mW/°C
°C/W
1
2
Thermal Resistance,
Junction-to-Ambient
R
q
(Note 2)
JA
Top View Pinout
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
(Note 3)
710
mW
ORDERING INFORMATION
†
Device
Package
Shipping
Junction and Storage
Temperature Range
T , T
J
-55 to
+150
°C
stg
NSS60601MZ4T1G
NSS60601MZ4T3G
SOT-223
(Pb-Free)
1000/
Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SOT-223
(Pb-Free)
4000/
Tape & Reel
2
1. FR-ā4 @ 7.6 mm , 1 oz. copper traces.
2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2. FR-ā4 @ 645 mm , 1 oz. copper traces.
3. Thermal response.
©ꢀ Semiconductor Components Industries, LLC, 2007
September, 2007 - Rev. 0
1
Publication Order Number:
NSS60601MZ4/D