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NSV60601MZ4T1G PDF预览

NSV60601MZ4T1G

更新时间： 2024-01-19 10:03:22
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 110K
描述
60 V, 6.0 A, Low VCE(sat) NPN Transistor

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中文翻译

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NSV60601MZ4T1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, 318E-04, TO-261, 4 PIN针数：4
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：4 weeks风险等级：1.5
外壳连接：COLLECTOR最大集电极电流 (IC)：6 A
集电极-发射极最大电压：60 V配置：SINGLE
最小直流电流增益 (hFE)：50JEDEC-95代码：TO-261AA
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：2 W
参考标准：AEC-Q101子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：100 MHz
最大关闭时间（toff）：1475 ns最大开启时间（吨）：200 ns
Base Number Matches：1

NSV60601MZ4T1G 数据手册

 浏览型号NSV60601MZ4T1G的Datasheet PDF文件第2页浏览型号NSV60601MZ4T1G的Datasheet PDF文件第3页浏览型号NSV60601MZ4T1G的Datasheet PDF文件第4页浏览型号NSV60601MZ4T1G的Datasheet PDF文件第5页浏览型号NSV60601MZ4T1G的Datasheet PDF文件第6页 
NSS60601MZ4,  
NSV60601MZ4T1G,  
NSV60601MZ4T3G  
60 V, 6.0 A, Low VCE(sat)  
NPN Transistor  
http://onsemi.com  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are surface mount devices featuring ultra low saturation  
voltage (V ) and high current gain capability. These are designed  
for use in low voltage, high speed switching applications where  
affordable efficient energy control is important.  
60 VOLTS, 6.0 AMPS  
2.0 WATTS  
CE(sat)  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 50 mW  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
SOT−223  
CASE 318E  
STYLE 1  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
C 2, 4  
Features  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
B 1  
E 3  
Schematic  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant*  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
60  
Unit  
Vdc  
Vdc  
Vdc  
A
AYW  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
60601G  
100  
6.0  
1
A
Y
= Assembly Location  
= Year  
Collector Current − Continuous  
Collector Current − Peak  
I
C
6.0  
W
= Work Week  
I
12.0  
A
CM  
60601 = Specific Device Code  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
G
= Pb−Free Package  
PIN ASSIGNMENT  
4
C
B
1
C
2
E
3
Top View Pinout  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
October, 2012 − Rev. 3  
NSS60601MZ4/D  
123456

中文翻译

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NSV60601MZ4T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSV60601MZ4T3G ONSEMI

完全替代

 60 V, 6.0 A, Low VCE(sat) NPN Transistor
DSS60601MZ4-13 DIODES

功能相似

 LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
NSS60601MZ4T1G ONSEMI

功能相似

 60 V, 6.0 A, Low VCE(sat) NPN Transistor

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