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DSS60601MZ4-13 PDF预览

DSS60601MZ4-13

更新时间: 2024-01-27 16:14:02
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率双极晶体管开关光电二极管
页数 文件大小 规格书
5页 109K
描述
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

DSS60601MZ4-13 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:GREEN, PLASTIC PACKAGE-4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.69Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):6 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

DSS60601MZ4-13 数据手册

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DSS60601MZ4  
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Ideal for Medium Power Switching or Amplification Applications  
Case: SOT-223  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.115 grams (approximate)  
Complementary PNP Type Available (DSS60600MZ4)  
Ultra Low Collector-Emitter Saturation Voltage  
Ideally Suited for Automated Assembly Processes  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
TOR  
LEC  
COL  
2,4  
3 E  
2 C  
1 B  
C 4  
1
BAS  
E
3
EMITTE  
R
Pin Out Configuration  
Top View  
Device Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
100  
60  
Unit  
V
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
6
V
Peak Pulse Collector Current  
Continuous Collector Current  
12  
A
6
A
IC  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1.2  
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
104  
°C/W  
W
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Power Dissipation (Note 4) @ TA = 25°C  
JA  
2
PD  
Rθ  
62.5  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB with minimum recommended pad layout.  
4. Device mounted on Polymide PCB with 330mm2 2 oz. Copper pad layout.  
1 of 5  
www.diodes.com  
December 2008  
© Diodes Incorporated  
DSS60601MZ4  
Document number: DS31587 Rev. 2 - 2  

DSS60601MZ4-13 替代型号

型号 品牌 替代类型 描述 数据表
NSS60601MZ4T1G ONSEMI

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60 V, 6.0 A, Low VCE(sat) NPN Transistor

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