NSB9435T1
Preferred Device
High Current Bias Resistor
Transistor
PNP Silicon
Features
http://onsemi.com
• Collector −Emitter Sustaining Voltage −
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.275 VOLTS
V
= 30 Vdc (Min) @ I = 10 mAdc
C
CEO(sus)
• High DC Current Gain −
h
= 125 (Min) @ I = 0.8 Adc
FE
C
= 90 (Min) @ I = 3.0 Adc
C
• Low Collector −Emitter Saturation Voltage −
V
CE(sat)
= 0.275 Vdc (Max) @ I = 1.2 Adc
C
COLLECTOR 2,4
= 0.55 Vdc (Max) @ I = 3.0 Adc
C
• SOT−223 Surface Mount Packaging
BASE
1
• ESD Rating − Human Body Model: Class 1B
− Machine Model: Class B
• Pb−Free Package is Available
EMITTER 3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
SOT−223
CASE 318E
STYLE 1
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
30
Unit
Vdc
Vdc
Vdc
Adc
Adc
V
CEO
V
45
CB
EB
MARKING DIAGRAM
V
6.0
1.0
Base Current − Continuous
I
B
Collector Current − Continuous
− Peak
I
3.0
5.0
C
AYW
9435R G
G
Total Power Dissipation @ T = 25_C
P
3.0
24
1.56
W
mW/_C
W
C
D
1
Derate above 25_C
Total P @ T = 25_C mounted on 1″ sq.
D
A
(645 sq. mm) Collector pad on FR−4 bd
material
A
Y
W
= Assembly Location
= Year
= Work Week
0.72
W
Total P @ T = 25_C mounted on 0.012″
D
A
sq. (7.6 sq. mm) Collector pad on FR−4 bd
material
9435R = Device Code
G
= Pb−Free Package
Operating and Storage Junction
Temperature Range
T , T
–55 to
+150
_C
J
stg
(Note: Microdot may be in either location)
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†
Device
Package
Shipping
NSB9435T1
SOT−223
1000/Tape & Reel
1000/Tape & Reel
NSB9435T1G
SOT−223
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
April, 2006 − Rev. 5
NSB9435T1/D