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NSS40400CF8T1G

更新时间： 2024-11-04 03:35:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 48K
描述
40 V, 7 A, Low VCE(sat) PNP Transistor

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NSS40400CF8T1G 数据手册

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NSS40400CF8T1G  
40 V, 7 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
CE(sat)  
http://onsemi.com  
40 VOLTS  
7.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 78 mW  
Typical application are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
COLLECTOR  
1, 2, 3, 6, 7, 8  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
4
BASE  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
−40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
A
5
EMITTER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
−60  
ChipFET]  
CASE 1206A  
STYLE 4  
−5.0  
−4.0  
−7.0  
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
I
CM  
PIN  
MARKING  
DIAGRAM  
ESD  
HBM Class 3B  
MM Class C  
CONNECTIONS  
THERMAL CHARACTERISTICS  
Characteristic  
8
7
6
5
1
2
3
4
C
C
C
E
C
C
C
B
1
2
3
4
8
7
6
5
Symbol  
Max  
Unit  
Total Device Dissipation, T = 25°C  
P
(Note 1)  
650  
5.2  
mW  
mW/°C  
A
D
Derate above 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
q
(Note 1)  
192  
°C/W  
JA  
Total Device Dissipation, T = 25°C  
P
(Note 2)  
D
1.57  
12.7  
W
mW/°C  
A
Derate above 25°C  
VS9 = Specific Device Code  
Thermal Resistance,  
Junction−to−Ambient  
R
(Note 2)  
79  
°C/W  
°C/W  
W
q
JA  
M
= Month Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Thermal Resistance,  
Junction−to−Lead #1  
R
q
JL  
15  
ORDERING INFORMATION  
Total Device Dissipation  
(Single Pulse < 10 sec)  
P
2.75  
Dsingle  
(Notes 2 & 3)  
†
Device  
NSS40400CF8T1G  
Package  
Shipping  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
ChipFET  
3000/  
(Pb−Free)  
Tape & Reel  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
1. FR−4 @ 100 mm , 2 oz copper traces.  
2
2. FR−4 @ 500 mm , 2 oz copper traces.  
3. Thermal response.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 0  
NSS40400CF8/D  
 
1234

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NSS40400CF8T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSS40600CF8T1G ONSEMI

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