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NSS40301MZ4T1G

更新时间： 2024-11-04 12:33:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关光电二极管
页数 文件大小 规格书
6页 81K
描述
Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat)

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中文翻译

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NSS40301MZ4T1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-261包装说明：LEAD FREE, CASE 318E-04, TO-261, 4 PIN
针数：4Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.78Is Samacsys：N
最大集电极电流 (IC)：3 A集电极-发射极最大电压：40 V
配置：SINGLE最小直流电流增益 (hFE)：100
JEDEC-95代码：TO-261JESD-30 代码：R-PDSO-G4
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：4
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：215 MHzBase Number Matches：1

NSS40301MZ4T1G 数据手册

 浏览型号NSS40301MZ4T1G的Datasheet PDF文件第2页浏览型号NSS40301MZ4T1G的Datasheet PDF文件第3页浏览型号NSS40301MZ4T1G的Datasheet PDF文件第4页浏览型号NSS40301MZ4T1G的Datasheet PDF文件第5页浏览型号NSS40301MZ4T1G的Datasheet PDF文件第6页 
NSS40301MZ4  
Bipolar Power Transistors  
40 V, 3.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
http://onsemi.com  
transistors are surface mount devices featuring ultra low saturation  
voltage (V ) and high current gain capability. These are designed  
CE(sat)  
NPN TRANSISTOR  
3.0 AMPERES  
40 VOLTS, 2.0 WATTS  
for use in low voltage, high speed switching applications where  
affordable efficient energy control is important.  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
C 2, 4  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
B 1  
E 3  
Schematic  
Features  
• Complement to NSS40300MZ4 Series  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
4
1
2
3
SOT−223  
CASE 318E  
STYLE 1  
• These Devices are Pb−Free, Halogen Free/BFR Free and are  
RoHS Compliant  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
W
AYW  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
40301G  
V
40  
1
CB  
EB  
V
6.0  
1.0  
3.0  
5.0  
A
Y
= Assembly Location  
Year  
Base Current − Continuous  
Collector Current − Continuous  
Collector Current − Peak  
I
B
C
W
= Work Week  
40301 = Specific Device Code  
I
G
= Pb−Free Package  
I
CM  
PIN ASSIGNMENT  
Total Power Dissipation  
P
D
Total P @ T = 25°C (Note 1)  
2.0  
0.80  
D
A
4
Total P @ T = 25°C (Note 2)  
D
A
C
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
B
1
C
2
E
3
1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material.  
Top View Pinout  
2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
September, 2013 − Rev. 3  
NSS40301MZ4/D  
 
123456

中文翻译

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NSS40301MZ4T1G 替代型号

型号 品牌 替代类型 描述 数据表
NJV4031NT3G ONSEMI

完全替代

 Bipolar Power Transistors
NJT4031NT3G ONSEMI

完全替代

 Bipolar Power Transistors NPN Silicon
NJT4031NT1G ONSEMI

类似代替

 Bipolar Power Transistors NPN Silicon

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