NSS40500UW3T2G
40 V, 6.0 A, Low VCE(sat)
PNP Transistor
2
ON Semiconductor’s e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
CE(sat)
http://onsemi.com
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
−40 VOLTS
6.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 65 mW
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
COLLECTOR
3
2
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
1
BASE
MAXIMUM RATINGS (T = 25°C)
2
A
EMITTER
Rating
Symbol
Max
−40
Unit
Vdc
Vdc
Vdc
Adc
A
3
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
2
WDFN3
CASE 506AU
−40
1
−7.0
−5.0
−6.0
MARKING DIAGRAM
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
I
C
VA M
I
CM
G
ESD
HBM Class 3B
MM Class C
1
VA = Specific Device Code
THERMAL CHARACTERISTICS
Characteristic
M
= Date Code
G
= Pb−Free Package
Symbol
Max
Unit
Total Device Dissipation, T = 25°C
P
D
(Note 1)
875
7.0
mW
mW/°C
ORDERING INFORMATION
A
Derate above 25°C
†
Device
NSS40500UW3T2G
Package
Shipping
Thermal Resistance,
R
(Note 1)
143
°C/W
q
JA
Junction−to−Ambient
WDFN3
(Pb−Free)
3000/
Tape & Reel
Total Device Dissipation, T = 25°C
Derate above 25°C
P
(Note 2)
1.5
11.8
W
mW/°C
A
D
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Thermal Resistance,
Junction−to−Ambient
R
(Note 2)
(Note 2)
85
°C/W
°C/W
W
q
JA
Thermal Resistance,
Junction−to−Lead #1
R
q
JL
23
Total Device Dissipation
(Single Pulse < 10 sec)
P
3.0
Dsingle
(Notes 2 & 3)
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
2
1. FR−4 @ 100 mm , 1 oz copper traces.
2. FR−4 @ 500 mm , 1 oz copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
March, 2007 − Rev. 1
NSS40500UW3/D