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NSS40401LT1G

更新时间： 2024-09-25 20:01:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 129K
描述
TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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NSS40401LT1G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
风险等级：5.84最大集电极电流 (IC)：4 A
配置：Single最小直流电流增益 (hFE)：200
最高工作温度：150 °C极性/信道类型：NPN
最大功率耗散 (Abs)：0.54 W子类别：Other Transistors
表面贴装：YES标称过渡频率 (fT)：150 MHz
Base Number Matches：1

NSS40401LT1G 数据手册

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NSS40401LT1G  
40 V, 8.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
40 VOLTS, 8.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 44 mW  
COLLECTOR  
3
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
1
BASE  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
2
EMITTER  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
40  
Unit  
Vdc  
Vdc  
Vdc  
A
3
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
40  
1
7.0  
4.0  
8.0  
2
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
SOT−23 (TO−236)  
CASE 318  
I
A
CM  
STYLE 6  
ESD  
HBM Class 3B  
MM Class C  
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
(Note 1)  
460  
mW  
AC M G  
D
T = 25°C  
G
A
Derate above 25°C  
3.7  
mW/°C  
°C/W  
1
Thermal Resistance,  
R
(Note 1)  
270  
q
JA  
Junction−to−Ambient  
AC = Specific Device Code  
Total Device Dissipation  
P
(Note 2)  
540  
mW  
M
G
= Date Code*  
= Pb−Free Package  
D
T = 25°C  
A
Derate above 25°C  
4.3  
mW/°C  
°C/W  
(Note: Microdot may be in either location)  
Thermal Resistance,  
R
(Note 2)  
230  
q
JA  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Junction−to−Ambient  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
°C  
J
stg  
+150  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†
Device  
Package  
Shipping  
NSS40401LT1G  
SOT−23  
3000/Tape & Reel  
2
2
1. FR−4 @ 100 mm , 1 oz. copper traces.  
(Pb−Free)  
2. FR−4 @ 500 mm , 1 oz. copper traces.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
December, 2011 − Rev. 0  
NSS40401L/D  
 
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