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NSS40301MDR2G

更新时间： 2024-11-04 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 107K
描述
Dual Matched 40 V, 6.0 A, Low VCE(sat) NPN Transistor

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中文翻译

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NSS40301MDR2G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SOIC包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：1.19最大集电极电流 (IC)：3 A
集电极-发射极最大电压：40 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：180JESD-30 代码：R-PDSO-G8
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：8
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.783 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：100 MHz最大关闭时间（toff）：890 ns
最大开启时间（吨）：200 nsBase Number Matches：1

NSS40301MDR2G 数据手册

 浏览型号NSS40301MDR2G的Datasheet PDF文件第2页浏览型号NSS40301MDR2G的Datasheet PDF文件第3页浏览型号NSS40301MDR2G的Datasheet PDF文件第4页浏览型号NSS40301MDR2G的Datasheet PDF文件第5页浏览型号NSS40301MDR2G的Datasheet PDF文件第6页 
NSS40301MDR2G  
Dual Matched 40 V, 6.0 A,  
Low VCE(sat) NPN Transistor  
2
These transistors are part of the ON Semiconductor e PowerEdge  
family of Low V  
transistors. They are assembled to create a pair  
CE(sat)  
of devices highly matched in all parameters, including ultra low  
saturation voltage V , high current gain and Base/Emitter turn on  
CE(sat)  
voltage.  
http://onsemi.com  
Typical applications are current mirrors, differential amplifiers,  
DC−DC converters and power management in portable and battery  
powered products such as cellular and cordless phones, PDAs,  
computers, printers, digital cameras and MP3 players. Other  
applications are low voltage motor controls in mass storage products  
such as disc drives and tape drives. In the automotive industry they can  
be used in air bag deployment and in the instrument cluster. The high  
40 VOLTS  
6.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 44 mW  
COLLECTOR  
7,8  
COLLECTOR  
5,6  
2
current gain allows e PowerEdge devices to be driven directly from  
PMU’s control outputs, and the Linear Gain (Beta) makes them ideal  
components in analog amplifiers.  
2
4
BASE  
BASE  
Features  
1
3
• Current Gain Matching to 10%  
• Base Emitter Voltage Matched to 2 mV  
• This is a Pb−Free Device  
EMITTER  
EMITTER  
8
MAXIMUM RATINGS (T = 25°C)  
A
1
Rating  
Symbol  
Max  
40  
Unit  
Vdc  
Vdc  
Vdc  
A
SOIC−8  
CASE 751  
STYLE 16  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
40  
6.0  
3.0  
6.0  
DEVICE MARKING  
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
8
I
A
CM  
N40301  
ESD  
HBM Class 3B  
MM Class C  
AYWWG  
G
1
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
N40301 = Specific Device Code  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NSS40301MDR2G  
SOIC−8  
2500 /  
(Pb−Free) Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
May, 2008 − Rev. 1  
NSS40301MD/D  
123456

中文翻译

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