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NSS40300DDR2G PDF预览

NSS40300DDR2G

更新时间: 2024-11-04 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 105K
描述
Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor

NSS40300DDR2G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOIC包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:1.29最大集电极电流 (IC):3 A
集电极-发射极最大电压:40 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):150JESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.783 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHz最大关闭时间(toff):530 ns
最大开启时间(吨):180 ns

NSS40300DDR2G 数据手册

 浏览型号NSS40300DDR2G的Datasheet PDF文件第2页浏览型号NSS40300DDR2G的Datasheet PDF文件第3页浏览型号NSS40300DDR2G的Datasheet PDF文件第4页浏览型号NSS40300DDR2G的Datasheet PDF文件第5页浏览型号NSS40300DDR2G的Datasheet PDF文件第6页 
NSS40300DDR2G  
Dual 40 V, 6.0 A, Low  
VCE(sat) PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are surface mount devices featuring ultra low saturation  
voltage (V ) and high current gain capability. These are designed  
for use in low voltage, high speed switching applications where  
affordable efficient energy control is important.  
CE(sat)  
http://onsemi.com  
40 VOLTS  
6.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 80 mW  
Typical applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
COLLECTOR  
7,8  
COLLECTOR  
5,6  
Features  
Halide Free  
This is a PbFree Device  
2
4
BASE  
BASE  
1
3
MAXIMUM RATINGS (T = 25°C)  
A
EMITTER  
EMITTER  
Rating  
Symbol  
Max  
40  
Unit  
Vdc  
Vdc  
Vdc  
A
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
40  
8
7.0  
3.0  
6.0  
1
Collector Current Continuous  
Collector Current Peak  
Electrostatic Discharge  
I
C
SOIC8  
CASE 751  
STYLE 16  
I
A
CM  
ESD  
HBM Class 3B  
MM Class C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
DEVICE MARKING  
8
40300  
AYWWG  
G
1
40300 = Specific Device Code  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NSS40300DDR2G  
SOIC8  
2500 /  
(PbFree)  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
September, 2008 Rev. 0  
NSS40300D/D  

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