是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SOIC | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 1.29 | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 40 V | 配置: | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE): | 150 | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 8 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.783 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | 最大关闭时间(toff): | 530 ns |
最大开启时间(吨): | 180 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NSS40300MDR2G | ONSEMI |
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Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor | |
NSS40300MZ4 | ONSEMI |
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Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor | |
NSS40300MZ4/D | ONSEMI |
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Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor | |
NSS40300MZ4_10 | ONSEMI |
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Bipolar Power Transistors | |
NSS40300MZ4T1G | ONSEMI |
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Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor | |
NSS40300MZ4T3G | ONSEMI |
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Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor | |
NSS40301CTWG | ONSEMI |
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40 V, 3.0A Low VCE(sat) NPN Transistor | |
NSS40301MDR2G | ONSEMI |
获取价格 |
Dual Matched 40 V, 6.0 A, Low VCE(sat) NPN Transistor | |
NSS40301MZ4 | ONSEMI |
获取价格 |
Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor | |
NSS40301MZ4_10 | ONSEMI |
获取价格 |
Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor |