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NSS30100LT1G

更新时间： 2024-02-05 22:29:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
6页 66K
描述
30 V, 2 A, Low Vce(sat) PNP Transistor

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中文翻译

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NSS30100LT1G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：SOT-23包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：1.55Is Samacsys：N
最大集电极电流 (IC)：1 A集电极-发射极最大电压：30 V
配置：SINGLE最小直流电流增益 (hFE)：40
JEDEC-95代码：TO-236JESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：0.71 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：100 MHzBase Number Matches：1

NSS30100LT1G 数据手册

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NSS30100LT1G  
30 V, 2 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical application are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
30 VOLTS  
2.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 200 mW  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
COLLECTOR  
3
• This is a Pb−Free Device  
1
BASE  
MAXIMUM RATINGS (T = 25°C)  
A
2
Rating  
Symbol  
Max  
−30  
Unit  
Vdc  
Vdc  
Vdc  
A
EMITTER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
−50  
−5.0  
−1.0  
−2.0  
3
Collector Current − Continuous  
Collector Current − Peak  
I
C
I
A
CM  
1
2
THERMAL CHARACTERISTICS  
Characteristic  
SOT−23 (TO−236)  
CASE 318  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
(Note 1)  
310  
mW  
D
STYLE 6  
T = 25°C  
A
Derate above 25°C  
2.5  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient  
R
(Note 1)  
403  
θ
JA  
DEVICE MARKING  
3
Total Device Dissipation  
P
(Note 2)  
(Note 2)  
710  
mW  
D
T = 25°C  
A
Derate above 25°C  
5.7  
mW/°C  
°C/W  
VS4  
Thermal Resistance,  
Junction to Ambient  
R
176  
2
1
θ
JA  
VS4 = Specific Device Code  
Total Device Dissipation  
(Single Pulse < 10 sec.)  
P
575  
mW  
Dsingle  
(Note 3)  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
ORDERING INFORMATION  
J
stg  
†
Device  
NSS30100LT1G  
Package  
Shipping  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR−4 @ Minimum Pad.  
2. FR−4 @ 1.0 X 1.0 inch Pad.  
SOT−23  
3000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
3. Refer to Figure 8.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 − Rev. 0  
NSS30100L/D  
 
123456

中文翻译

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NSS30100LT1G 替代型号

型号 品牌 替代类型 描述 数据表
NSVMMBT589LT1G ONSEMI

类似代替

 30 V，1.0 A，高电流，PNP，低饱和压，双极晶体管
MMBT589LT1G ONSEMI

类似代替

 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portabl
FMMT589TA DIODES

功能相似

 Small Signal Bipolar Transistor, 0.001A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, GREEN

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