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NSS35200CF8T1G_06

更新时间： 2024-11-04 03:35:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 67K
描述
35 V, 7 A, Low VCE(sat) PNP Transistor

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NSS35200CF8T1G_06 数据手册

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NSS35200CF8T1G  
35 V, 7 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
CE(sat)  
http://onsemi.com  
35 VOLTS  
7.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 78 mW  
Typical application are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
COLLECTOR  
1, 2, 3, 6, 7, 8  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
4
BASE  
Features  
• This is a Pb−Free Device  
5
EMITTER  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Symbol  
Max  
−35  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
A
V
CEO  
V
CBO  
V
EBO  
ChipFET]  
CASE 1206A  
STYLE 4  
−55  
−5.0  
−2.0  
−7.0  
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
I
CM  
PIN  
MARKING  
DIAGRAM  
ESD  
HBM Class 3  
MM Class C  
CONNECTIONS  
THERMAL CHARACTERISTICS  
Characteristic  
8
7
6
5
1
2
3
4
C
C
C
E
C
C
C
B
1
2
3
4
8
7
6
5
Symbol  
Max  
Unit  
Total Device Dissipation  
P
635  
mW  
D
T = 25°C  
(Note 1)  
A
Derate above 25°C  
5.1  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
200  
(Note 1)  
Total Device Dissipation  
P
1.35  
W
D
T = 25°C  
(Note 2)  
A
Derate above 25°C  
11  
90  
mW/°C  
°C/W  
G4= Specific Device Code  
M = Month Code  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
(Note 2)  
G
= Pb−Free Package  
Thermal Resistance, Junction−to−Lead #1  
R
q
JL  
15  
°C/W  
ORDERING INFORMATION  
Total Device Dissipation  
(Single Pulse < 10 sec)  
P
2.75  
W
Dsingle  
(Notes 2 & 3)  
†
Device  
NSS35200CF8T1G  
Package  
Shipping  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
ChipFET  
(Pb−Free)  
3000/  
Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
1. FR−4 @ 100 mm , 1 oz copper traces.  
2
2. FR−4 @ 500 mm , 1 oz copper traces.  
3. Thermal response.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 5  
NSS35200CF8T1G/D  
 
123456

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