5秒后页面跳转
NSS40200L_16 PDF预览

NSS40200L_16

更新时间: 2024-02-17 16:30:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 92K
描述
PNP Transistor

NSS40200L_16 数据手册

 浏览型号NSS40200L_16的Datasheet PDF文件第2页浏览型号NSS40200L_16的Datasheet PDF文件第3页浏览型号NSS40200L_16的Datasheet PDF文件第4页浏览型号NSS40200L_16的Datasheet PDF文件第5页浏览型号NSS40200L_16的Datasheet PDF文件第6页 
NSS40200L, NSV40200L  
40 V, 2.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
www.onsemi.com  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
−40 VOLTS  
2.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 80 mW  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
SOT−23 (TO−236)  
CASE 318  
STYLE 6  
Features  
COLLECTOR  
3
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
1
BASE  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
2
EMITTER  
MARKING DIAGRAM  
VA M G  
G
1
VA = Specific Device Code*  
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Specific Device Code, Date Code or overbar  
orientation and/or location may vary  
depending upon manufacturing location.  
This is a representation only and actual  
devices may not match this drawing exactly.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NSS40200LT1G  
SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
NSV40200LT1G  
SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2016 − Rev. 8  
NSS40200L/D  

与NSS40200L_16相关器件

型号 品牌 获取价格 描述 数据表
NSS40200LT1G ONSEMI

获取价格

40 V, 4.0 A, Low VCE(sat) PNP Transistor
NSS40200LT1G_07 ONSEMI

获取价格

40 V, 4.0 A, Low VCE(sat) PNP Transistor
NSS40200UW6T1G ONSEMI

获取价格

40 V, 4.0 A, Low VCE(sat) PNP Transistor
NSS40201LT1G ONSEMI

获取价格

40 V, 4.0 A, Low VCE(sat) NPN Transistor
NSS40300CTWG ONSEMI

获取价格

40 V, 3A, Low VCE(sat) PNP Transistor
NSS40300DDR2G ONSEMI

获取价格

Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor
NSS40300MDR2G ONSEMI

获取价格

Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor
NSS40300MZ4 ONSEMI

获取价格

Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor
NSS40300MZ4/D ONSEMI

获取价格

Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor
NSS40300MZ4_10 ONSEMI

获取价格

Bipolar Power Transistors