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NSS30070MR6T1G

更新时间： 2024-02-21 20:41:18
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
4页 65K
描述
30 V, 0.7 A, Low VCE(sat) PNP Transistor

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中文翻译

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NSS30070MR6T1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-74包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：1.25最大集电极电流 (IC)：0.7 A
集电极-发射极最大电压：30 V配置：SINGLE
最小直流电流增益 (hFE)：150JESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：0.665 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSS30070MR6T1G 数据手册

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NSS30070MR6T1G  
30 V, 0.7 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
CE(sat)  
http://onsemi.com  
30 VOLTS  
0.7 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 320 mW  
Typical application are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
2
COLLECTOR  
PINS 2, 5  
BASE  
PIN 6  
• This is a Pb−Free Device  
EMITTER  
PIN 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
Value  
30  
Unit  
V
4
V
CEO  
5
6
V
40  
V
CBO  
EBO  
3
2
1
V
5.0  
V
SC−74  
CASE 318F  
STYLE 2  
I
C
700  
350  
mA  
mA  
Base Current  
I
B
Total Power Dissipation @ T = 25°C  
P
P
342  
178  
366  
mW  
mW  
°C/W  
C
D
D
Total Power Dissipation @ T = 85°C  
C
DEVICE MARKING  
R
q
JA  
Thermal Resistance − Junction−to−Ambient  
(Note 1)  
Total Power Dissipation @ T = 25°C  
P
P
665  
346  
188  
mW  
mW  
°C/W  
C
D
D
M
VS2  
Total Power Dissipation @ T = 85°C  
C
R
q
JA  
Thermal Resistance − Junction−to−Ambient  
(Note 2)  
Operating and Storage Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
VS2 = Specific Device Code  
M
= Date Code  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not normal  
operating conditions) and are not valid simultaneously. If these limits are exceeded,  
device functional operation is not implied, damage may occur and reliability may be  
affected.  
ORDERING INFORMATION  
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.  
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),  
Operating to Steady State.  
†
Device  
NSS30070MR6T1G  
Package  
Shipping  
SC−74 3000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 − Rev. 0  
NSS30070MR6/D  
 
1234

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NSS30070MR6T1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBT2131T1G ONSEMI

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