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NSS30071MR6T1G

更新时间： 2024-02-07 03:45:53
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
6页 63K
描述
30 V, 0.7 A, Low VCE(sat) NPN Transistor

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中文翻译

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NSS30071MR6T1G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：SC-74包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：1.22Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：226752
Samacsys Pin Count：6Samacsys Part Category：Transistor
Samacsys Package Category：SOT23 (6-Pin)Samacsys Footprint Name：SC-74 CASE 318F-05 ISSUE K
Samacsys Released Date：2015-08-28 01:49:51Is Samacsys：N
最大集电极电流 (IC)：0.7 A集电极-发射极最大电压：30 V
配置：SINGLE最小直流电流增益 (hFE)：150
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：0.665 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NSS30071MR6T1G 数据手册

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NSS30071MR6T1G  
30 V, 0.7 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
CE(sat)  
http://onsemi.com  
Typical application are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
30 VOLTS  
0.7 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 200 mW  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
COLLECTOR  
PINS 2, 5  
• This is a Pb−Free Device  
BASE  
PIN 6  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector−Emitter Voltage  
Symbol Value Unit  
EMITTER  
PIN 3  
V
CEO  
V
CBO  
V
EBO  
30  
40  
V
V
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
5.0  
700  
350  
V
4
5
6
I
mA  
mA  
C
3
2
1
Base Current  
I
B
SC−74  
CASE 318F  
STYLE 2  
Total Power Dissipation @ T = 25°C  
P
P
342  
178  
366  
mW  
mW  
°C/W  
C
D
D
Total Power Dissipation @ T = 85°C  
C
Thermal Resistance − Junction−to−Ambient  
(Note 1)  
R
q
JA  
Total Power Dissipation @ T = 25°C  
P
P
665  
346  
188  
mW  
mW  
°C/W  
C
D
D
Total Power Dissipation @ T = 85°C  
C
Thermal Resistance − Junction−to−Ambient  
(Note 2)  
R
q
JA  
DEVICE MARKING  
Operating and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
M
VS3  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.  
2. Mounted onto a 2″ square FR−4 Board (1″ sq 2 oz Cu 0.06″ thick single sided),  
Operating to Steady State.  
VS3 = Specific Device Code  
M
= Date Code  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NSS30071MR6T1G SC−74 10000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1
Publication Order Number:  
©
Semiconductor Components Industries, LLC, 2005  
NSS30071MR6/D  
June, 2005 − Rev. 0  
 
123456

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NSS30071MR6T1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBT2132T3G ONSEMI

完全替代

 General Purpose Transistors NPN Bipolar Junction Transistor

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