Datasheet > NPT1007

NPT1007

更新时间： 2024-11-25 01:22:27

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
7页	1018K
描述
Gallium Nitride 28V, 200W RF Power Transistor

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NPT1007 数据手册

NPT1007

Gallium Nitride 28V, 200W RF Power Transistor

Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology

FEATURES

• Optimized for narrowband and broadband

applications from from DC – 1200MHz

• 200W P_3dBCW power at 900MHz in quadrature

combined or push-pull conﬁguration

• 90W CW power from 500-1000MHz in application

design AD-014

• High efﬁciency from 14V to 28V

• 1.0 °C/W R with maximum T_Jrating of 200°C

• Robust up to 10:1 VSWR mismatch at all angles

with no device degradation

DC – 1200 MHz

14 – 28 Volt

GaN HEMT

• Subject to EAR99 export control

RF Speciﬁcations (CW): V_DS= 28V, I_DQ= 1400mA¹, Frequency = 900MHz, T_A= 25°C, Measured in Nitronex Quadrature

Combined Test Fixture².

Symbol

Parameter

Min

Typ

Max

Units

P_3dB

G_SS

Average Output Power at 3dB Gain Compression

Small Signal Gain

52.0

17.3

53.0

18.3

dBm

Drain Efﬁciency at 3dB Gain Compression²¹

10:1 VSWR at all phase angles

VSWR

No change in device performance

Note 1: 700mA per transistor. Each gate should be biased independently to set desired I_DQ

Note 2: Includes ~ 0.2 dB quadrature combiner loss.

Typical 2-Tone Performance: V_DS= 28V, I_DQ= 1400mA¹, Frequency = 900MHz, Tone spacing = 1MHz, T_A= 25°C

Measured in Nitronex Quadrature Combined Test Fixture².

Symbol

Parameter

Typ

Units

P_3dB,PEP

P_1dB,PEP

P_IMD3

Peak Envelope Power at 3dB Gain Compression

Peak Envelope Power at 1dB Gain Compression

Peak Envelope Power at -35dBc IMD3

53.4

52.6

50.8

dBm

Note 1: 700mA per transistor. Each gate should be biased independently to set desired I_DQ

Note 2: Includes ~ 0.2 dB quadrature combiner loss.

NPT1007

Page 1

NDS-012 Rev. 3, April 2013

12 3 4 5 6 7

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