Datasheet > NPT1010

NPT1010

更新时间： 2024-11-25 01:22:27

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
10页	1231K
描述
Gallium Nitride 28V, 100W RF Power Transistor

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NPT1010 数据手册

NPT1010

Gallium Nitride 28V, 100W RF Power Transistor

Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology

FEATURES

• Optimized for broadband operation from

DC – 2000MHz

• 100W P_3dBCW power at 900MHz

• 60-95 W P_SATCW power from 500-1000MHz in

broadband application design

• High efﬁciency from 14 - 28V

• 1.4 °C/W R with maximum T_Jrating of 200°C

• Robust up to 10:1 VSWR mismatch at all phase

angles with no damage to the device

DC – 2000 MHz

14 – 28 Volt

GaN HEMT

• Subject to EAR99 export control

RF Speciﬁcations (CW, 900MHz): V_DS= 28V, I_DQ= 700mA, T_A= 25°C, Measured in Nitronex Test Fixture

Symbol

Parameter

Min

Typ

Max

Units

P_3dB

P_1dB

Average Output Power at 3dB Gain Compression

Average Output Power at 1dB Gain Compression

49.0

50.0

49.0

19.7

dBm

G_SS

Small Signal Gain

18.7

Drain Efﬁciency at 3dB Gain Compression

10:1 VSWR at all phase angles

VSWR

No damage to the device

Figure 1 - Typical CW Performance in Load-Pull,

Figure 2 - Typical CW Performance in Load-Pull,

V_DS= 28V, I_DQ= 700mA

NPT1010

Page 1

NDS-023 Rev. 3, April 2013

12 3 4 5 6 7...10

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