Datasheet > NPT2019

NPT2019

更新时间： 2024-11-25 01:22:27

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
5页	918K
描述
Gallium Nitride 48V, 25W, DC-6 GHz HEMT

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NPT2019 数据手册

NPT2019

Preliminary

Gallium Nitride 48V, 25W, DC-6 GHz HEMT

Built using the SIGANTIC^®process - A proprietary GaN-on-Silicon technology

Features



Suitable for linear and pulsed applications

Tunable from DC-6 GHz

48V Operation

Industry Standard Plastic Package

High Drain Efficiency (>60%)

Applications



Defense Communications

Land Mobile Radio

Avionics

DC-6 GHz

25W

GaN HEMT

Wireless Infrastructure

ISM Applications

VHF/UHF/L/S-Band Radar

Product Description

The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This

device has been designed for CW, pulsed, and linear operation with pulsed output power levels

to 25W (44 dBm) in an industry standard surface mount plastic package.

RF Specifications (Pulsed*, 2.5 GHz): V_DS= 48V, I_DQ= 150mA, T_C= 25°C

Symbol

Parameter

Min

Typ

Max

Units

G_SS

Small-signal Gain

16.2

P_SAT

Saturated Output Power

44.8

dBm

Efficiency at Saturated Output Power

Gain at P_OUT= 25W*

_SAT

G_P

Drain Efficiency at P_OUT= 25W*

Drain Voltage



V_DS

Ruggedness: Output Mismatch, all phase angles

VSWR = TBD:1, No Device Damage



* Pulse Conditions: 100µS pulse width, 10% duty cycle

Preliminary Datasheet

NDS-043 Rev. 2, 012414

Page 1

12 3 4 5

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