Datasheet > NPT2022_14

NPT2022_14

更新时间： 2024-11-25 01:18:39

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
11页	1815K
描述
GaN Wideband Transistor 48 V, 100 W

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NPT2022_14 数据手册

NPT2022

GaN Wideband Transistor 48 V, 100 W

DC - 2 GHz

Rev. V1

Features



GaN on Si HEMT D-Mode Transistor

Suitable for linear and saturated applications

Tunable from DC - 2 GHz

48 V Operation

20 dB Gain @ 900 MHz

60 % Drain Efficiency @ 900 MHz

100 % RF Tested

Standard plastic package with bolt down flange

RoHS* Compliant and 260°C reflow compatible

Description

The NPT2022 GaN HEMT is a wideband transistor

optimized for DC - 2 GHz operation. This device

supports CW, pulsed, and linear operation with

output power levels to 100 W (50 dBm) in an

industry standard plastic package.

Functional Schematic

The NPT2022 is ideally suited for defense

communications, land mobile radio, avionics,

wireless infrastructure, ISM applications and VHF/

UHF/L/S-band radar.

Built using the SIGANTIC® process - a proprietary

GaN-on-Silicon technology.

Pin Configuration

Pin No.

Pin Name

RF_IN/ V_G

RF_OUT/ V_D

Pad¹

Function

RF Input / Gate

Ordering Information

RF Output / Drain

Ground / Source

Part Number

NPT2022

Package

Bulk Quantity

Sample Board

1. The exposed pad centered on the package bottom must be

connected to RF and DC ground. This path must also

provide a low thermal resistance heat path.

NPT2022-SMBPPR

Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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