Datasheet > NPT35015

NPT35015

更新时间： 2024-11-25 01:22:27

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
10页	723K
描述
Gallium Nitride 28V, 18W RF Power Transistor

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NPT35015 数据手册

NPT35015

Gallium Nitride 28V, 18W RF Power Transistor

Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology

FEATURES

• Optimized for CW, Pulsed, WiMAX, and other ap-

plications from 3300 - 3800 MHz

• 18W P3dB CW Power

• 25W P3dB peak envelope power

• 1.7W linear power @ 2% EVM for single carrier

OFDM, 10.3dB peak/average, 10.3dB @ 0.01%

probability on CCDF, 10.5dB gain, 18%

drain efﬁciency

3300 – 3800 MHz

18 Watt, 28 Volt

GaN HEMT

• Characterized for operation up to 32V

• 100% RF tested

• Thermally enhanced industry standard package

• High reliability gold metallization process

• Lead-free and RoHS compliant

• Subject to EAR99 export control

Typical 2-Tone Performance: V_DS= 28V, I_DQ= 200mA, Frequency = 3500MHz, Tone spacing = 1MHz, T_C= 25°C.

Measured in Nitronex Test Fixture

Symbol

Parameter

Min

Typ

Max

Units

P_3dB,PEP

P_1dB,PEP

G_SS

Peak Envelope Power at 3dB Compression

Peak Envelope Power at 1dB Compression

Small Signal Gain

Peak Drain Efﬁciency at P_OUT= P_3dB

RF Speciﬁcations (CW): V_DS= 28V, I_DQ= 200mA, Frequency = 3500MHz, T_C= 25°C, Measured in Load Pull System

Symbol

Parameter

Typ

Units

P_3dB

Average Output Power at 3dB Gain Compression

Pulsed Output Power at 3dB Gain Compression

Pulsed Output Power at 1dB Gain Compression

P_3dB,Pulsed

P_1dB,Pulsed

Typical OFDM Performance: V_DS= 28V, I_DQ= 200mA, P_OUT,AVG= 1.7W, single carrier OFDM waveform 64-QAM

3/4, 8 burst, 20ms frame, 15ms frame data, 3.5MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF.

Frequency = 3300 to 3800MHz. T_C=25°C. Measured in Load Pull System (Refer to Table 1 and Figure 1)

Symbol

Parameter

Typ

Units

G_P

Power Gain

10.5

Drain Efﬁciency

Error Vector Magnitude

Input Return Loss

EVM

IRL

2.0

NPT35015

Page 1

NDS-005 Rev 5, April 2013

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