Datasheet > NPT35050A_15

NPT35050A_15

更新时间： 2024-11-25 01:20:03

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
10页	673K
描述
65W RF Power Transistor

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NPT35050A_15 数据手册

NPT35050A

Gallium Nitride 28V, 65W RF Power Transistor

Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology

FEATURES

• Optimized for CW, pulsed, WiMAX, and other

applications from 3300 – 3800 MHz

• 90W P_3dBPEP power

• 65W P_3dBCW power

• 6W linear power @ 2.0% EVM for single carrier

OFDM, 10.3dB peak/avg, 3.5MHz channel

bandwidth, 12dB gain, 18% efﬁciency

• Qualiﬁed for operation up to 32V

• 100% RF tested

3300 - 3800 MHz

65 Watt, 28 Volt

GaN HEMT

• Thermally enhanced industry standard package

• High reliability gold metallization process

• Lead-free and RoHS compliant

• Subject to 3A001b.3.a Export Control

RF Speciﬁcations (CW): V_DS= 28V, I_DQ= 750mA, Frequency = 3500MHz, T_C= 25°C, Measured in Nitronex Test Fixture

Symbol

Parameter

Min

Typ

Max

Units

P_3dB

G_SS

Average Output Power at 3dB Compression

Small Signal Gain

12.5

13.5

Drain Efﬁciency at 3dB Compression

Output Mismatch Stress, VSWR = 10:1, all phase

angles at 3500MHz)

No Performance Degradation After Test

Typical 2-Tone Performance: V_DS= 28V, I_DQ= 750mA, Frequency = 3500MHz, Tone Spacing = 0.1MHz, T_C= 25°C

Measured in Load-Pull System

Symbol

Parameter

Typ

Units

P_3dB,PEP

P_1dB,PEP

P_IMD3

Peak Envelope Power at 3dB Compression

Peak Envelope Power at 1dB Compression

Peak Envelope Power at -35dBm IMD3

Typical OFDM Performance: V_DS= 28V, I_DQ= 750mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms

frame, 15ms frame data, 3.5 MHz channel bandwidth. Peak/Avg. = 10.3dB @ 0.01% probability on CCDF. Frequency =

3400 - 3600MHz. P_OUT,AVG= 6W, T_C= 25°C. Measured in Nitronex Test Fixture

Symbol

Parameter

Typ

Units

G_P

Power Gain

Drain Efﬁciency

Error Vector Magnitude

EVM

2.0

NPT35050A

Page 1

NDS-003 Rev.3, April 2013

12 3 4 5 6 7...10

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