Datasheet > NPTB00050

NPTB00050

更新时间： 2024-11-28 01:22:27

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
8页	510K
描述
Gallium Nitride 28V, 50W RF Power Transistor

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中文翻译

获取价格

数据手册

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NPTB00050 数据手册

NPTB00050

Not recommended for new designs

Contact applications@nitronex.com for questions or support

Gallium Nitride 28V, 50W RF Power Transistor

Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology

FEATURES

• Optimized for broadband operation from

DC - 4000MHz

• 50W P_3dBCW narrowband power

• 25W P_3dBCW broadband power from

500-1000MHz

• Characterized for operation up to 32V

• 100% RF tested

• Thermally enhanced industry standard package

Broadband

50 Watt, 28 Volt

• High reliability gold metallization process

• Lead-free and RoHS compliant

GaN HEMT

• Subject to ECCN 3A982.a.1 export control

RF Speciﬁcations (CW): V_DS= 28V, I_DQ= 450mA, Frequency = 3000MHz, T_C= 25°C, Measured in Nitronex Test Fixture

Symbol

Parameter

Min

Typ

Max

Units

P_3dB

P_1dB

G_SS

Average Output Power at 3dB Gain Compression

Average Output Power at 1dB Gain Compression

Small Signal Gain

10.5

11.5

Peak Drain Efﬁciency at P_OUT= P_3dB

Output mismatch stress, VSWR = 7:1, all phase

angles, P_OUT= P_1dB

No Performance Degradation After Test

Typical OFDM Performance: V_DS= 28V, I_DQ= 300mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst,

continuous frame data, 10MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF.

Frequency = 2400 to 2600MHz. P_OUT,AVG= 6W, T_C=25°C.

Symbol

Parameter

Typ

Units

G_P

Power Gain

12.0

Drain Efﬁciency

Error Vector Magnitude

EVM

2.0

NPTB00050

Page 1

NDS-007 Rev 6, April 2013

12 3 4 5 6 7 8

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