Datasheet > NPTB00025

NPTB00025

更新时间： 2024-11-25 01:22:27

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
6页	683K
描述
Gallium Nitride 28V, 25W RF Power Transistor

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数据手册

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NPTB00025 数据手册

NPTB00025

Gallium Nitride 28V, 25W RF Power Transistor

Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology

FEATURES

• Optimized for broadband operation from

DC - 4000MHz

• 25W P_3dBCW narrowband power

• 10W P_3dBCW broadband power from 500-1000MHz

• Characterized for operation up to 32V

• 100% RF tested

Broadband

25 Watt, 28 Volt

GaN HEMT

• Thermally enhanced industry standard package

• High reliability gold metallization process

• Lead-free and RoHS compliant

• Subject to EAR99 export control

RF Speciﬁcations (CW): V_DS= 28V, I_DQ= 225mA, Frequency = 3000MHz, T_C= 25°C, Measured in Nitronex Test Fixture

Symbol

Parameter

Min

Typ

Max

Units

P_3dB

P_1dB

G_SS

Average Output Power at 3dB Gain Compression

Average Output Power at 1dB Gain Compression

Small Signal Gain

12.5

13.5

Drain Efﬁciency at 3dB Gain Compression

Output mismatch stress, VSWR = 10:1, all phase

angles, P_OUT= P_SAT

No Performance Degradation After Test

Absolute Maximum Ratings: Not simultaneous, T_C= 25°C unless otherwise noted

Symbol

Parameter

Max

Units

V_DS

V_GS

I_G

Drain-Source Voltage

100

-10 to 3

Gate-Source Voltage

Gate Current

P_T

Total Device Power Dissipation (Derated above 25°C)

Thermal Resistance (Junction-to-Case)

Storage Temperature Range

q_JC

T_STG

T_J

5.25

°C/W

°C

-65 to 150

200

Operating Junction Temperature

Human Body Model ESD Rating (per JESD22-A114)

Machine Model ESD Rating (per JESD22-A115)

°C

HBM

1A (>250V)

M1 (>50V)

NPTB00025

Page 1

NDS-006 Rev. 4, April 2013

12 3 4 5 6

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