Datasheet > NPTB00004B

NPTB00004B

更新时间： 2024-11-25 14:55:43

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
12页	2222K
描述
GaN Power Transistor, 28 V, 5 W DC - 6 GHz

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NPTB00004B 数据手册

GaN Power Transistor, 28 V, 5 W

DC - 6 GHz

NPTB00004B

Rev. V1

Functional Schematic

Features

•

GaN on Si HEMT D-Mode Transistor

Suitable for linear and saturated applications

Tunable from DC - 6 GHz

28 V Operation

14.8 dB Gain @ 2.5 GHz

57 % Drain Efficiency @ 2.5 GHz

100 % RF Tested

Industry standard SOIC plastic package

RoHS* Compliant

N/C

RF_IN/ V_G

N/C

RF_OUT/ V_D

N/C

Paddle

Applications

•

Defense Communications

Land Mobile Radio

Avionics

Wireless Infrastructure

ISM

VHF/UHF/L/S-Band Radar

Pin Configuration

1, 4, 5, 8

2, 3

N/C

No Connection

RF Input / Gate

RF Output / Drain

Ground / Source

RF_IN/ V_G

RF_OUT/ V_D

Paddle¹

Description

The NPTB00004B GaN HEMT is a power transistor

optimized for DC - 6 GHz operation. This device

supports CW, pulsed, and linear operation with

output power levels to 5 W (37 dBm) in an industry

standard surface mount plastic package.

6, 7

1. The exposed pad centered on the package bottom must be

connected to RF and DC ground. This path must also provide

a low thermal resistance heat path.

Ordering Information

Part Number

NPTB00004B

Package

Bulk Quantity

Sample Board

Tape and Reel

NPTB00004B-SMB

NPTB00004B-TR0500

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0026038

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