Datasheet > NPTB00004

NPTB00004

更新时间： 2024-11-25 01:22:27

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
10页	953K
描述
Gallium Nitride 28V, 5W RF Power Transistor

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中文翻译

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数据手册

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NPTB00004 数据手册

NPTB00004

Gallium Nitride 28V, 5W RF Power Transistor

Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology

FEATURES

• Optimized for CW, pulsed, WiMAX, W-CDMA, LTE,

and other applications from DC to 6GHz

• 100% RF Tested at 2500MHz

• 5W P3dB CW Power

• 15.5dB Power Gain

DC - 6000MHz

5 Watt, 28 Volt

GaN HEMT

• Low cost, surface mount SOIC package

• High reliability gold metallization process

• Lead-free and RoHS compliant

• Subject to EAR99 Export Control

2-Tone Speciﬁcations: V_DS= 28V, I_DQ= 50mA, Frequency = 2500MHz, Tone spacing = 1MHz, T_C= 25°C

Measured in Nitronex Test Fixture

Symbol

Parameter

Min

Typ

Max

Units

P_1dB,PEP

G_SS

Peak Envelope Power at 1dB Compression

Small Signal Gain

5.0

14.5

7.5

15.5

2.5

P_IMD3

Peak Envelope Power at -35dBc IMD3

Drain Efﬁciency at 3dB Compression

RF Performance (CW): V_DS= 28V, I_DQ= 50mA, Frequency = 2500MHz, T_C= 25°C, Measured in Nitronex

Test Fixture

Symbol

P_3dB

P_1dB

Parameter

Typ

5.1

2.9

Units

Average Output Power at 3dB Compression

Average Output Power at 1dB Compression

Drain Efﬁciency at 3dB Compression

OFDM Performance: V_DS= 28V, I_DQ= 100mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame

data, 3.5 MHz channel bandwidth. Peak/Avg. = 10.3dB @ 0.01% probability on CCDF. Frequency = 3500MHz, P_OUT,AVG

24dBm, T_C= 25°C. Measured in Load Pull System

Symbol

Parameter

Typ

Units

G_P

Power Gain

11.2

Drain Efﬁciency

EVM

Error Vector Magnitude

1.0

NPTB00004

Page 1

NDS-002 Rev 7, April 2013

12 3 4 5 6 7...10

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