Datasheet > NPT25015_15

NPT25015_15

更新时间： 2024-11-25 01:20:03

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
8页	624K
描述
23W RF Power Transistor

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中文翻译

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数据手册

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NPT25015_15 数据手册

NPT25015

Gallium Nitride 28V, 23W RF Power Transistor

Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology

FEATURES

•ꢀ Optimized for CW, pulsed, WiMAX, and other

applications from DC - 3000 MHz

•ꢀ 23W P3dB peak envelope power (PEP)

•ꢀ 1.5W linear power @ 2% EVM for single carrier

OFDM, 10.3dB peak/average,

3.5MHz channel bandwidth, 14dB gain,

23.5% efficiency, 2500-2700MHz

•ꢀ 100% RF tested

DC - 3000 MHz

23 Watt, 28 Volt

GaN HEMT

•ꢀ Thermally-enhanced industry standard package

•ꢀ High reliability gold metallization process

•ꢀ Lead-free and RoHS compliant

•ꢀ Subject to EAR99 export control

Typical 2-Tone Performance: V_DS= 28V, I_DQ= 200mA, Frequency = 2500MHz, Tone Spacing = 1.0MHz, T_C= 25°C

Measured in Nitronex Test Fixture

Symbol

Parameter

Min

Typ

Max

Units

P_3dB,PEP

P_1dB,PEP

G_SS

Peak Envelope Power at 3dB Compression

Peak Envelope Power at 1dB Compression

Small Signal Gain

15.0

13.0

14.0

DrainꢀEfﬁciencyꢀatꢀ3dBꢀCompression

Typical OFDM Performance: V_DS= 28V, I_DQ= 200mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst,

continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF. Frequency =

2500 - 2700MHz. P_OUT,AVG= 1.5W, T_C= 25°C. Measured in Load Pull System (Refer to Table 1 and Figure 1)

Symbol

Parameter

Typ

Units

G_P

Power Gain

14.0

23.5

2.0

DrainꢀEfﬁciency

Error Vector Magnitude

EVM

NPT25015

Page 1

NDS-004 Rev 4, April 2013

12 3 4 5 6 7 8

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