Datasheet > NPT35015

NPT35015

更新时间： 2024-11-25 14:51:19

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
12页	933K
描述
GaN Amplifier 28 V, 18 W, 3.3 - 3.8 GHz

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NPT35015 数据手册

GaN Power Transistor, 28 V, 18 W

3.3 - 3.8 GHz

NPT35015

Rev. V1

Features

Functional Schematic

•

Optimized for CW, Pulsed, WiMAX, and other

applications from 3.3 - 3.8 GHz

18 W P3dB CW Power

25 W P3dB Peak Envelope Power

1.7 W Linear Power @ 2% EVM for single carrier

OFDM, 10.3 dB peak/average, 10.3 dB @ 0.01%

Probability on CCDF, 10.5 dB Gain, 18% Drain

Efficiency

•

100% RF tested

Thermally-Enhanced Surface Mount SOIC

Package

•

High Reliability Gold Metallization Process

Subject to EAR99 Export Control

RoHS* Compliant

Pin Configuration

Applications

•

Defense Communications

Land Mobile Radio

Avionics

Wireless Infrastructure

ISM

VHF/UHF/L/S-Band Radar

1 - 4

5 - 8

Gate

Drain

Paddle¹

1. The exposed pad centered on the package bottom must be

connected to RF and DC ground. This path must also provide

a low thermal resistance heat path.

Description

The NPT35015 GaN HEMT is a power transistor

optimized for 3.3 - 3.5 GHz operation. This device

supports CW, pulsed, and linear operation with

output power levels to 18 W. This transistor is

assembled in an industry standard surface mount

plastic package.

Ordering Information

Part Number

NPT35015DT

NPT35015DR

Package

Tube (97 pieces)

1500 piece reel

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0008217

12 3 4 5 6 7...12

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