Datasheet > NPT25015

NPT25015

更新时间： 2024-11-25 14:55:31

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	1131K
描述
GaN Amplifier 28 V, 23 W, DC - 3 GHz

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NPT25015 数据手册

NPT25015

GaN Power Transistor 28 V, 23 W

DC - 3 GHz

Rev. V1

Features

Functional Schematic



Optimized for CW, pulsed, WiMAX, and other

applications from DC - 3000 MHz

23 W P3dB peak envelope power (PEP)

1.5 W linear power @ 2% EVM for single carrier

OFDM, 10.3 dB peak/average, 3.5 MHz channel

bandwidth, 14 dB gain, 23.5% efficiency, 2500-

2700 MHz



100% RF tested

Thermally-enhanced industry standard package

High reliability gold metallization process

Lead-free and RoHS compliant

Subject to EAR99 export control

Description

The NPT25015 GaN HEMT is a power transistor

optimized for DC - 3 GHz operation. This device

supports CW, pulsed, and linear operation with

output power levels to 23 W. This transistor is

assembled in an industry standard surface mount

plastic package.

The NPT25015 is ideally suited for defense

communications, land mobile radio, avionics,

wireless infrastructure, ISM applications and VHF/

UHF/L/S-band radar.

Ordering Information

Pin Configuration

Pin No.

1 - 4

5 - 8

Function

Gate

Part Number

NPT25015DT

NPT25015DR

Package

Tube (97 pieces)

1500 piece reel

Drain

Paddle¹

1. The exposed pad centered on the package bottom must be

connected to RF and DC ground. This path must also pro-

vide a low thermal resistance heat path.

Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0012425

12 3 4 5 6 7...9

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