Datasheet > NPT2021-SMBPPR

NPT2021-SMBPPR

更新时间： 2024-11-25 01:14:39

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
9页	1544K
描述
Suitable for linear and saturated applications

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NPT2021-SMBPPR 数据手册

NPT2021

GaN Wideband Transistor 48 V, 45 W

DC - 2.5 GHz

Rev. V1

Features



GaN on Si HEMT D-Mode Transistor

Suitable for linear and saturated applications

Tunable from DC - 2.5 GHz

48 V Operation

16.5 dB Gain at 2.5 GHz

55 % Drain Efficiency at 2.5 GHz

100 % RF Tested

TO-272 Package

RoHS* Compliant and 260°C reflow compatible

Description

The NPT2021 GaN HEMT is a wideband transistor

optimized for DC - 2.5 GHz operation. This device

supports CW, pulsed, and linear operation with

output power levels to 45 W in an industry standard

plastic package with bolt down flange.

Functional Schematic

The NPT2021 is ideally suited for defense

communications, land mobile radio, avionics,

wireless infrastructure, ISM applications and VHF/

UHF/L/S-band radar.

Built using the SIGANTIC® process - a proprietary

GaN-on-Silicon technology.

Pin Configuration

Pin No.

Pin Name

RF_IN/ V_G

RF_OUT/ V_D

Pad¹

Function

RF Input / Gate

Ordering Information

RF Output / Drain

Ground / Source

Part Number

NPT2021

Package

Bulk Quantity

Sample Board

1. The exposed pad centered on the package bottom must be

connected to RF and DC ground. This path must also

provide a low thermal resistance heat path.

NPT2021-SMBPPR

Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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