Datasheet > NPT2022

NPT2022

更新时间： 2024-11-24 22:53:55

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
12页	2290K
描述
HEMT N-CH 48V 100W DC-2GHZ

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数据手册

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NPT2022 数据手册

GaN on Silicon General Purpose Amplifier

DC - 2 GHz, 48 V, 100 W

NPT2022

Rev. V3

Features

•

GaN on Si HEMT D-Mode Amplifier

Suitable for Linear & Saturated Applications

Tunable from DC - 2 GHz

48 V Operation

20 dB Gain @ 900 MHz

60% Drain Efficiency @ 900 MHz

100% RF Tested

TO-272 Package

RoHS* Compliant and 260°C Reflow Compatible

Functional Schematic

Description

The NPT2022 GaN on silicon HEMT D-Mode

amplifier optimized for DC - 2 GHz operation. This

device supports CW, pulsed, and linear operation

with output power levels to 100 W in an industry

standard plastic package with bolt down flange.

The NPT2022 is ideally suited for defense

communications, land mobile radio, avionics,

wireless infrastructure, ISM applications and VHF/

UHF/L/S-band radar.

Built using the SIGANTIC® process - a proprietary

GaN-on-Silicon technology.

Pin Configuration

Ordering Information

Part Number

NPT2022

Package

RF_IN/ V_G

RF_OUT/ V_D

Pad¹

RF Input / Gate

Bulk Quantity

Sample Board

Tape & Reel

RF Output / Drain

Ground / Source

NPT2022-SMB1

NPT2022-TR0250

1. The exposed pad centered on the package bottom must be

connected to RF and DC ground. This path must also provide

a low thermal resistance heat path.

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0006486

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