Datasheet > NPT2020-SMBPPR

NPT2020-SMBPPR

更新时间： 2024-11-25 01:06:59

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
13页	1241K
描述
GaN Wideband Transistor 48 V, 50 W

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NPT2020-SMBPPR 数据手册

NPT2020

GaN Wideband Transistor 48 V, 50 W

DC - 3.5 GHz

Rev. V1

Features



GaN on Si HEMT Depletion Mode Transistor

Suitable for Linear and Saturated Applications

Tunable from DC - 3.5 GHz

48 V Operation

13.5 dB Gain at 3.5 GHz

55 % Drain Efficiency at 3.5 GHz

100 % RF Tested

Standard package with bolt down flange

RoHS* Compliant and 260°C reflow compatible

Description

Functional Schematic

The NPT2020 GaN HEMT is a wideband transistor

optimized for DC - 3.5 GHz operation. This device

supports CW, pulsed, and linear operation with

output power levels to 50 W (47 dBm) in an industry

standard surface mount package.

The NPT2020 is ideally suited for defense

communications, land mobile radio, avionics,

wireless infrastructure, ISM applications and VHF/

UHF/L/S-band radar.

RF_OUT/ V_D

RF_IN/ V_G

Built using the SIGANTIC® process - a proprietary

GaN-on-Silicon technology.

Flange

Ordering Information

Pin Configuration

Part Number

NPT2020

Package

Bulk Quantity

Custom Sample Board¹

Pin No.

Pin Name

RF_IN/ V_G

RF_OUT/ V_D

Flange²

Function

RF Input / Gate

NPT2020-SMBPPR

RF Output / Drain

Ground / Source

1250-1850 MHz

Sample Board

NPT2020-SMB2

1. When ordering, specify application requirements (frequency,

linearity, etc.)

2. The Flange must be connected to RF and DC ground. This

path must also provide a low thermal resistance heat path.

Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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