Datasheet > NPT1015

NPT1015

更新时间： 2024-11-25 01:22:27

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
10页	2269K
描述
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT

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NPT1015 数据手册

NPT1015

Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT

Built using the SIGANTIC^®process - A proprietary GaN-on-Silicon technology

Features



Suitable for linear and saturated applications

Tunable from DC-3.5 GHz

28V Operation

Industry Standard Package

High Drain Efficiency (>55%)

Rugged Design Passes 15:1 VSWR test

Reliable with MTTF > 10⁶at T_J= 200°C

Applications

DC-3.5 GHz

45W

GaN HEMT



Defense Communications

Land Mobile Radio

Avionics

Wireless Infrastructure

ISM Applications

VHF/UHF/L-Band Radar

Product Description

The NPT1015 GaN HEMT is a wideband transistor optimized for DC-3.5 GHz operation. This

device has been designed for CW, pulsed, and linear operation with output power levels to 45W

(46.5 dBm) in an industry standard metal-ceramic package with a bolt down flange. This product

has been designed to be reliable, with a low thermal resistance, and rugged, able to withstand

extreme mismatch on the input and output with no device damage.

RF Specifications (CW, 2.5 GHz): V_DS= 28V, I_DQ= 400mA, T_C= 25°C

Symbol

Parameter

Min

Typ

Max

Units

G_SS

Small-signal Gain

13.5

P_SAT

_SAT

G_P

Saturated Output Power

47.3

dBm

Efficiency at Saturated Output Power

Gain at P_OUT= 45W

10.5

Drain Efficiency at P_OUT= 45W

Drain Voltage



V_DS

Ruggedness: Output Mismatch, All Phase Angles

VSWR = 15:1, No Device Damage



NDS-035 Rev. 2, 121213

Page 1

12 3 4 5 6 7...10

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