Datasheet > NPT2018

NPT2018

更新时间： 2024-11-25 14:53:11

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
8页	1118K
描述
GaN Amplifier 50 V, 12 W, DC-3.5 GHz

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数据手册

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NPT2018 数据手册

NPT2018

12.5 W GaN Wideband Transistor

DC - 3.5 GHz

Rev. V3

Features



GaN on Si HEMT D-Mode Transistor

Suitable for Linear and Saturated Applications

Tunable from DC - 3.5 GHz

50 V Power Operation

16 dB Gain @ 2.5 GHz

56% Drain Efficiency @ 2.5 GHz

100% RF Tested

Lead-Free 3 x 6 mm 14-Lead PDFN Package

RoHS* Compliant

Functional Schematic

Description

The NPT2018 GaN HEMT is a wideband transistor

optimized for DC - 3.5 GHz operation. This device

supports CW, pulsed, and linear operation with

output power levels to 12.5 W (41 dBm) in an

industry standard surface mount plastic package.

The NPT2018 is ideally suited for defense

communications, land mobile radio, avionics,

wireless infrastructure, ISM applications and VHF/

UHF/L/S-band radar.

RF_IN/ V_G

RF_OUT/ V_D

Ordering Information¹

Pin Configuration

Part Number

NPT2018

Package

Bulk

Pin #

1-2, 6-9, 13-14

3-5

Pin Name

Function

No Connection

RF Input / Gate

RF Output / Drain

Ground / Source

NPT2018-TR500

NPT2018-TR100

NPT2018-SMB

500 piece reel

100 piece reel

Sample Board

RF_IN/ V_G

RF_OUT/ V_D

Paddle²

10-12

1. Reference Application Note M513 for reel size information.

2. The exposed pad centered on the package bottom must be

connected to RF and DC ground. This path must also provide

a low thermal resistance heat path.

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0006414

12 3 4 5 6 7 8

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