Datasheet > NPT2010_15

NPT2010_15

更新时间： 2024-11-25 01:23:19

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
10页	2452K
描述
DC-2.2 GHz HEMT

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NPT2010_15 数据手册

NPT2010

Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT

Built using the SIGANTIC^®process - A proprietary GaN-on-Silicon technology

Features



Suitable for linear and saturated applications

Tunable from DC-2.2 GHz

48V Operation

Industry Standard Package

High Drain Efficiency (>60%)

Applications



Defense Communications

Land Mobile Radio

Avionics

DC-2.2 GHz

100W

GaN HEMT

Wireless Infrastructure

ISM Applications

VHF/UHF/L-Band Radar

Product Description

The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This

device has been designed for CW, pulsed, and linear operation with output power levels to 100W

(50 dBm) in an industry standard metal-ceramic package with a bolt down flange.

RF Specifications (CW, 2.15 GHz): V_DS= 48V, I_DQ= 600mA, T_C= 25°C

Symbol

Parameter

Min

Typ

Max

Units

G_SS

Small-signal Gain

P_SAT

_SAT

G_P

Saturated Output Power

50.5

dBm

Efficiency at Saturated Output Power

Gain at P_OUT= 95W

13.5

52.5

Drain Efficiency at P_OUT= 95W

Drain Voltage



V_DS

Ruggedness: Output Mismatch, all phase angles

VSWR = 10:1, No Device Damage



NDS-034 Rev. 1, 052413

Page 1

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