Datasheet > NPT2018_15

NPT2018_15

更新时间： 2024-11-25 01:23:19

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
5页	927K
描述
DC-6 GHz HEMT

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中文翻译

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数据手册

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NPT2018_15 数据手册

NPT2018

Preliminary

Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT

Built using the SIGANTIC^®process - A proprietary GaN-on-Silicon technology

Features



Suitable for linear and saturated applications

Tunable from DC-6 GHz

48V Operation

Industry Standard Plastic Package

High Drain Efficiency (>60%)

Applications



Defense Communications

Land Mobile Radio

Avionics

DC-6 GHz

12.5W

GaN HEMT

Wireless Infrastructure

ISM Applications

VHF/UHF/L/S-Band Radar

Product Description

The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This

device has been designed for CW, pulsed, and linear operation with output power levels to

12.5W (41 dBm) in an industry standard surface mount plastic package.

RF Specifications (CW, 2.5 GHz): V_DS= 48V, I_DQ= 75mA, T_C= 25°C

Symbol

Parameter

Min

Typ

Max

Units

G_SS

Small-signal Gain

17.5

P_SAT

Saturated Output Power

41.8

dBm

Efficiency at Saturated Output Power

Gain at P_OUT= 12.5W

_SAT

G_P

16.5

Drain Efficiency at P_OUT= 12.5W

Drain Voltage



V_DS

Ruggedness: Output Mismatch, all phase angles

VSWR = 10:1, No Device Damage



Preliminary Datasheet

NDS-042 Rev. 2, 020314

Page 1

12 3 4 5

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