Datasheet > NPT1015B

NPT1015B

更新时间： 2024-11-25 01:17:07

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
12页	1548K
描述
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz

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NPT1015B 数据手册

NPT1015B

GaN Wideband Transistor 28 V, 45 W

DC - 3.5 GHz

Rev. V2

Features

Functional Schematic



GaN on Si HEMT D-Mode Transistor

Suitable for linear and saturated applications

Tunable from DC - 3.5 GHz

28 V Operation

12 dB Gain @ 2.5 GHz

54 % Drain Efficiency @ 2.5 GHz

100 % RF Tested

Standard metal ceramic package with bolt down

flange

RF_IN/ V_G

RF_OUT/ V_D



RoHS* Compliant

Flange

Description

The NPT1015 GaN HEMT is a wideband transistor

optimized for DC - 3.5 GHz operation. This device

supports CW, pulsed, and linear operation with

output power levels to 45 W (46.5 dBm) in an

industry standard metal-ceramic package with bolt

down flange.

The NPT1015 is ideally suited for defense

communications, land mobile radio, avionics,

wireless infrastructure, ISM applications and VHF/

UHF/L/S-band radar.

Pin Configuration

Pin No.

Pin Name

Function

RF_IN/ V_G

RF_OUT/ V_D

Flange¹

RF Input / Gate

Built using the SIGANTIC® process - a proprietary

GaN-on-Silicon technology.

RF Output / Drain

Ground / Source

1. The Flange must be connected to RF and DC ground. This

path must also provide a low thermal resistance heat path.

Ordering Information

Part Number

NPT1015B

Package

bulk quantity

sample

NPT1015B-SMBPPR

Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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