Datasheet > NPT1012

NPT1012

更新时间： 2024-11-25 01:22:27

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
8页	1019K
描述
Gallium Nitride 28V, 25W RF Power Transistor

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NPT1012 数据手册

NPT1012

Gallium Nitride 28V, 25W RF Power Transistor

Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology

FEATURES

• Optimized for broadband operation from

DC-4000MHz

• 25W P_3dBCW power at 3000MHz

• 16-20W P_3dBCW power from 1000-2500MHz in

application board with >45% drain efﬁciency

• 10-20W P_3dBCW power from 30-1000MHz in ap-

plication board with >50% drain efﬁciency

• High efﬁciency from 14 - 28V

DC – 4000 MHz

25 Watt, 28 Volt

GaN HEMT

• 4.0 °C/W R_THwith maximum T_Jrating of 200 °C

• Robust up to 10:1 VSWR mismatch at all angles

with no device damage at 90 °C ﬂange

• Subject to EAR99 export control

RF Speciﬁcations (CW, 3000MHz): V_DS= 28V, I_DQ= 225mA, T_C= 25°C, Measured in Nitronex Test Fixture

Symbol

Parameter

Min

Typ

Max

Units

P_3dB

P_1dB

G_SS

Average Output Power at 3dB Gain Compression

Average Output Power at 1dB Gain Compression

Small Signal Gain

dBm

Drain Efﬁciency at 3dB Gain Compression

10:1 VSWR at all phase angles

VSWR

No damage to the device

Figure 2 - Typical CW Performance¹in

Figure 1 - Typical CW Performance in

Load-Pull, V_DS= 28V, I_DQ= 225mA

Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability

NPT1012

Page 1

NDS-025 Rev. 3, April 2013

12 3 4 5 6 7 8

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