Datasheet > NPT1004

NPT1004

更新时间： 2024-11-25 01:22:27

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
6页	541K
描述
Gallium Nitride 28V, 45W RF Power Transistor

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NPT1004 数据手册

NPT1004

Gallium Nitride 28V, 45W RF Power Transistor

Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology

FEATURES

• Optimized for pulsed, WiMAX, W-CDMA, LTE,

and other light thermal load applications from

DC to 4.0GHz

• 2500MHz performance

ꢀ • 45W P3dB CW power

ꢀ • 13.5 dB small signal gain

ꢀ •ꢀ55%ꢀefﬁciencyꢀatꢀP3dB

DC - 4000MHz

45 Watt, 28 Volt

GaN HEMT

• 100% RF tested

• Low cost, surface mount SOIC package

•ꢀHighꢀreliabilityꢀgoldꢀmetallizationꢀprocess

• Lead-free and RoHS compliant

• Subject to EAR99 Export Control

RF Speciﬁcations (2-Tone): V_DS= 28V, I_DQꢀ=ꢀ400mA,ꢀꢀFrequencyꢀ=ꢀ2500MHz,ꢀToneꢀSpacingꢀ=ꢀ1MHz,ꢀT_C= 25°C,

Measured in Nitronex Test Fixture

Symbol

Parameter

Min

Typ

Max

Units

P_3dB

Average Output Power at 3dB Compression

P_1dB

G_SS

Average Output Power at 1dB Compression

Small Signal Gain

13.5

12.5

DrainꢀEfﬁciencyꢀatꢀ3dBꢀGainꢀCompression

Typical OFDM Performance (2500-2700MHz): V_DS= 28V, I_DQ= 350mA, P_OUT,AVG= 37dBm, single carrier OFDM

waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probabil-

ityꢀonꢀCCDF.ꢀꢀT_Cꢀ=ꢀ25°C.ꢀꢀMeasuredꢀinꢀLoadꢀPullꢀSystemꢀ(ReferꢀtoꢀTableꢀ2ꢀandꢀFigureꢀ1)

Symbol

Parameter

Typ

Units

EVM

G_P

Error Vector Magnitude

Power Gain

2.0

13.0

DrainꢀEfﬁciency

Typical OFDM Performance (3300-3500MHz): V_DS= 28V, I_DQ= 350mA, P_OUT,AVG= 36.5dBm, single carrier OFDM

waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01%

probabilityꢀonꢀCCDF.ꢀꢀT_Cꢀ=ꢀ25°C.ꢀꢀMeasuredꢀinꢀLoadꢀPullꢀSystemꢀ(ReferꢀtoꢀTableꢀ2ꢀandꢀFigureꢀ1)

Symbol

Parameter

Typ

Units

EVM

G_P

Error Vector Magnitude

Power Gain

2.0

10.5

DrainꢀEfﬁciency

NPT1004

Page 1

NDS-010 Rev. 4, April 2013

12 3 4 5 6

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