Datasheet > NPT1004D

NPT1004D

更新时间： 2024-11-25 14:53:59

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
7页	762K
描述
GaN Amplifier 28 V, 45 W, DC - 4 GHz

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NPT1004D 数据手册

GaN Power Transistor, 28 V, 45 W

DC - 4 GHz

NPT1004D

Rev. V1

Features

Functional Schematic

•

Optimized for Pulsed, WiMAX, W-CDMA, LTE, &

other light thermal load applications from DC - 4

GHz

•

2.5 GHz Performance

45 W P3dB CW Power

13.5 dB Small Signal Gain

55% Efficiency @ P3dB

100% RF Tested

Thermally-Enhanced Surface Mount SOIC

Package

•

High Reliability Gold Metallization Process

Subject to EAR99 Export Control

RoHS* Compliant

Pin Configuration

Applications

•

Defense Communications

Land Mobile Radio

Avionics

Wireless Infrastructure

ISM

VHF/UHF/L/S-Band Radar

1 - 4

5 - 8

Gate

Drain

Paddle¹

1. The exposed pad centered on the package bottom must be

connected to RF and DC ground. This path must also provide

a low thermal resistance heat path.

Description

The NPT1004 GaN HEMT is a power transistor

optimized for DC - 4 GHz operation. This device

supports CW, pulsed, and linear operation with

output power levels to 45 W. This transistor is

assembled in an industry standard surface mount

plastic package.

Ordering Information

Part Number

NPT1004DT

NPT1004DR

Package

Tube (97 pieces)

1500 piece reel

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0008218

12 3 4 5 6 7

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