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NJVMJB44H11T4G PDF预览

NJVMJB44H11T4G

更新时间： 2024-09-18 12:27:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 115K
描述
Complementary Power Transistors

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中文翻译

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NJVMJB44H11T4G 技术参数

是否无铅：不含铅生命周期：Active
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：4 weeks
风险等级：0.72Is Samacsys：N
最大集电极电流 (IC)：10 A配置：Single
最小直流电流增益 (hFE)：40JESD-609代码：e3
湿度敏感等级：1最高工作温度：150 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：50 W子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NJVMJB44H11T4G 数据手册

 浏览型号NJVMJB44H11T4G的Datasheet PDF文件第2页浏览型号NJVMJB44H11T4G的Datasheet PDF文件第3页浏览型号NJVMJB44H11T4G的Datasheet PDF文件第4页浏览型号NJVMJB44H11T4G的Datasheet PDF文件第5页浏览型号NJVMJB44H11T4G的Datasheet PDF文件第6页 
MJB44H11 (NPN),  
NJVMJB44H11 (NPN),  
MJB45H11 (PNP),  
NJVMJB45H11 (PNP)  
Complementary  
Power Transistors  
http://onsemi.com  
D2PAK for Surface Mount  
SILICON POWER  
TRANSISTORS  
10 AMPERES,  
Complementary power transistors are for general purpose power  
amplification and switching such as output or driver stages in  
applications such as switching regulators, converters and power  
amplifiers.  
80 VOLTS, 50 WATTS  
MARKING  
DIAGRAM  
Features  
• Low Collector−Emitter Saturation Voltage −  
V
= 1.0 V (Max) @ 8.0 A  
CE(sat)  
2
D PAK  
B4xH11G  
AYWW  
• Fast Switching Speeds  
CASE 418B  
STYLE 1  
• Complementary Pairs Simplifies Designs  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings:  
Human Body Model, 3B > 8000 V  
Machine Model, C > 400 V  
x
= 4 or 5  
A
Y
= Assembly Location  
= Year  
• NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
WW = Work Week  
G
= Pb−Free Package  
• Pb−Free Packages are Available  
ORDERING INFORMATION  
MAXIMUM RATINGS  
†
Device  
Package  
Shipping  
Rating  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Adc  
2
MJB44H11G  
D PAK  
50 Units/Rail  
V
CEO  
(Pb−Free)  
V
EB  
5
2
MJB44H11T4G  
NJVMJB44H11T4G  
MJB45H11G  
D PAK  
800/Tape & Reel  
800/Tape & Reel  
50 Units/Rail  
Collector Current − Continuous  
− Peak  
I
C
10  
20  
(Pb−Free)  
2
D PAK  
Total Power Dissipation  
P
D
(Pb−Free)  
@ T = 25°C  
C
50  
0.4  
W
W/°C  
2
Derate above 25°C  
D PAK  
(Pb−Free)  
Total Power Dissipation  
P
D
2
@ T = 25°C  
MJB45H11T4G  
NJVMJB45H11T4G  
D PAK  
800/Tape & Reel  
800/Tape & Reel  
A
2.0  
0.016  
W
W/°C  
Derate above 25°C  
(Pb−Free)  
2
D PAK  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to 150  
°C  
J
stg  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.5  
75  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 − Rev. 5  
MJB44H11/D  
123456

中文翻译

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NJVMJB44H11T4G 替代型号

型号 品牌 替代类型 描述 数据表
MJB44H11G ONSEMI

完全替代

 Complementary Power Transistors D2PAK for Surface Mount
MJB44H11 ONSEMI

完全替代

 Complementary Power Transistors
MJB44H11T4G ONSEMI

类似代替

 Complementary Power Transistors D2PAK for Surface Mount

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