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NGTB15N120FLWG

更新时间： 2024-09-13 11:58:47
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
10页 186K
描述
IGBT

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中文翻译

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NGTB15N120FLWG 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：,针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：6.76
最大集电极电流 (IC)：30 A集电极-发射极最大电压：1200 V
门极发射器阈值电压最大值：6.5 V门极-发射极最大电压：20 V
JESD-609代码：e3最高工作温度：150 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：156 W子类别：Insulated Gate BIP Transistors
表面贴装：NO端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NGTB15N120FLWG 数据手册

 浏览型号NGTB15N120FLWG的Datasheet PDF文件第2页浏览型号NGTB15N120FLWG的Datasheet PDF文件第3页浏览型号NGTB15N120FLWG的Datasheet PDF文件第4页浏览型号NGTB15N120FLWG的Datasheet PDF文件第5页浏览型号NGTB15N120FLWG的Datasheet PDF文件第6页浏览型号NGTB15N120FLWG的Datasheet PDF文件第7页 
NGTB15N120FLWG  
IGBT  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Trench construction, and provides superior performance  
in demanding switching applications, offering both low on state  
voltage and minimal switching loss. The IGBT is well suited for UPS  
and solar applications. Incorporated into the device is a soft and fast  
co−packaged free wheeling diode with a low forward voltage.  
http://onsemi.com  
Features  
• Low Saturation Voltage using Trench with Field Stop Technology  
• Low Switching Loss Reduces System Power Dissipation  
• 10 ms Short Circuit Capability  
15 A, 1200 V  
VCEsat = 2.0 V  
Eoff = 0.55 mJ  
• Low Gate Charge  
• Soft, Fast Free Wheeling Diode  
• These are Pb−Free Devices  
C
Typical Applications  
• Solar Inverter  
• UPS Inverter  
G
ABSOLUTE MAXIMUM RATINGS  
E
Rating  
Symbol  
Value  
Unit  
V
Collector−emitter voltage  
V
CES  
1200  
Collector current  
@ TC = 25°C  
I
C
A
30  
15  
@ TC = 100°C  
Pulsed collector current, T  
I
120  
A
A
pulse  
CM  
G
TO−247  
CASE 340L  
STYLE 4  
limited by T  
Jmax  
C
E
Diode forward current  
@ TC = 25°C  
I
F
30  
15  
@ TC = 100°C  
Diode pulsed current, T  
limited  
I
120  
A
pulse  
FM  
MARKING DIAGRAM  
by T  
Jmax  
Gate−emitter voltage  
V
$20  
V
GE  
Power Dissipation  
P
W
D
@ TC = 25°C  
@ TC = 100°C  
156  
62.5  
15N120FL  
AYWWG  
Short Circuit Withstand Time  
= 15 V, V = 500 V, T ≤ 150°C  
T
10  
ms  
°C  
SC  
V
GE  
CE  
J
Operating junction temperature  
range  
T
−55 to +150  
J
Storage temperature range  
T
−55 to +150  
°C  
°C  
stg  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
260  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
= Pb−Free Package  
ORDERING INFORMATION  
Device  
NGTB15N120FLWG  
Package  
Shipping  
TO−247 30 Units / Rail  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 0  
NGTB15N120FLW/D  
1234567...10

中文翻译

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NGTB15N120FLWG 替代型号

型号 品牌 替代类型 描述 数据表
NGTB15N120FL2WG ONSEMI

类似代替

 IGBT 1200V 15A 太阳能/UPS
IRG7PH30K10DPBF INFINEON

功能相似

 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG7PH46UDPBF INFINEON

功能相似

 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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