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NGTB25N120FL2WAG

更新时间： 2024-09-14 11:12:59
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
11页 221K
描述
IGBT，1200V，场截止 II，25 A

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NGTB25N120FL2WAG 数据手册

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NGTB25N120FL2WAG  
IGBT - Field Stop II / 4 Lead  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop II Trench construction, and provides superior  
performance in demanding switching applications, offering both low  
on state voltage and minimal switching loss. In addition, this new  
device is packaged in a TO−247−4L package that provides significant  
www.onsemi.com  
reduction in E Losses compared to standard TO−247−3L package.  
on  
The IGBT is well suited for UPS and solar applications. Incorporated  
into the device is a soft and fast co−packaged free wheeling diode with  
a low forward voltage.  
25 A, 1200 V  
VCEsat = 2.0 V  
Features  
Eon = 0.99 mJ  
• Extremely Efficient Trench with Field Stop Technology  
• T  
= 175°C  
Jmax  
C
• Improved Gate Control Lowers Switching Losses  
• Separate Emitter Drive Pin  
• TO−247−4L for Minimal E Losses  
on  
G
• Optimized for High Speed Switching  
• This is a Pb−Free Devices  
E1  
E
Typical Applications  
• Solar Inverters  
• Uninterruptible Power Supplies (UPS)  
• Neutral Point Clamp Topology  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
TO−247  
CASE 340AR  
4 LEAD  
C
E
Collector−emitter voltage  
V
CES  
1200  
V
A
E1  
G
Collector current  
@ TC = 25°C  
@ TC = 100°C  
I
C
100  
25  
MARKING DIAGRAM  
Pulsed collector current, T  
I
100  
A
A
A
V
pulse  
CM  
limited by T  
Jmax  
Diode forward current @ TC = 25°C  
@ TC = 100°C  
I
F
100  
25  
25N120FL2  
AYWWG  
Diode pulsed current, T  
limited  
I
100  
pulse  
FM  
by T  
Jmax  
Gate−emitter voltage  
Transient gate−emitter voltage  
(T = 5 ms, D < 0.10)  
V
GE  
20  
30  
pulse  
Power Dissipation  
@ TC = 25°C  
@ TC = 100°C  
P
D
385  
192  
W
25N120FL2 = Specific Device Code  
Operating junction temperature range  
Storage temperature range  
T
−55 to +175  
−55 to +175  
260  
°C  
°C  
°C  
J
A
Y
= Assembly Location  
= Year  
T
stg  
WW  
G
= Work Week  
= Pb−Free Package  
Lead temperature for soldering, 1/8″  
from case for 5 seconds  
T
SLD  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NGTB25N120FL2WAG TO−247 30 Units / Rail  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
May, 2016 − Rev. 0  
NGTB25N120FL2WA/D  
1234567...11

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